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Cantilever beam type wavelength-tunable vertical-cavity surface emitting laser structure and its manufacturing method

A vertical cavity surface emission, cantilever beam technology, used in lasers, laser parts, semiconductor lasers, etc., can solve the problems of low modulation rate, insufficient system integration, and inability to achieve wavelength selection, and achieve a wide range of lasing wavelengths. Tuning, avoiding the effects of small tuning ranges

Inactive Publication Date: 2009-04-15
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Insufficient system integration due to device thermal issues and limited tuning range prevents more wavelength selection
In WDM network construction, low modulation rate is another significant problem

Method used

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  • Cantilever beam type wavelength-tunable vertical-cavity surface emitting laser structure and its manufacturing method
  • Cantilever beam type wavelength-tunable vertical-cavity surface emitting laser structure and its manufacturing method
  • Cantilever beam type wavelength-tunable vertical-cavity surface emitting laser structure and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Step 1. Using metal organic chemical vapor deposition or molecular beam epitaxy system to sequentially epitaxially grow 26 pairs of n-type aluminum gallium arsenide layer 9 and n-type gallium arsenide layer 8 on n-gallium arsenide substrate 10, GaInAs / GaAs quantum well structure active region 7, oxidation confinement layer AlGaAs layer 6, p-type ohmic contact layer 5;

[0036] Step 2, using metal organic chemical vapor deposition or molecular beam epitaxy system to epitaxially grow the sacrificial layer AlGaAs layer on the p-type ohmic contact layer 5, and continue to epitaxially grow the gallium indium phosphorus etching stop layer 4 and 23 on the gallium arsenide layer 2 and a distributed feedback Bragg reflector 20 reflectors on the AlGaAs layer 3;

[0037] Step 3, using a method of combining photolithography and selective wet etching, selectively etching the upper distributed feedback Bragg reflector 20 reflectors to prepare a three-dimensional contour figure of th...

Embodiment 2

[0046] Step 1. Using metal organic chemical vapor deposition or molecular beam epitaxy system to sequentially epitaxially grow 26 pairs of n-type aluminum gallium arsenide layer 9 and n-type gallium arsenide layer 8 on n-gallium arsenide substrate 10, GaInAs / GaAs quantum well structure active region 7, oxidation confinement layer AlGaAs layer 6, p-type ohmic contact layer 5;

[0047] Step 2: Prepare a polyimide film on the p-type ohmic contact layer 5 by photolithography, and then continue to grow 10 pairs of Si by plasma chemical vapor deposition. 3 N 4 / SiO 2 The upper distributed feedback Bragg reflector mirror, the thickness of each pair of distributed feedback Bragg reflectors is 1 / 2 of the lasing wavelength;

[0048] Step 3, using a combination of photolithography and plasma etching, the upper distributed feedback Bragg mirror 20 is selectively etched to prepare a three-dimensional profile of the cantilever beam;

[0049] Step 4, performing secondary photolithography...

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PUM

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Abstract

This invention relates to a cantilever wavelength-tunable vertical cavity surface laser emission device. It is composed of: a positive electrode layer (1), an upper distributed Brag reflector (20), a corrosion-stop layer (4), a p-type ohmic contact layer (5), gallium arsenide aluminide oxidation current limiting layer (6), active layer (7), below distributed feedback Brag reflector (40), n-type gallium arsenide substrate (10), substrate electrode (11). The characteristics are: a hollow sacrifice layer (30) is placed between (20) and (5); an air gap layer (12) is in the (30); both (20) and (12) are forming the cantilever moveable reflector structure. This invention realizes micro-mechanically wavelength tunable laser, being better than prior art laser in WDM system which can not realizes the selection of more wavelength.

Description

technical field [0001] The invention relates to a structure and device of a cantilever beam type wavelength tunable vertical cavity surface emitting laser, belonging to the field of semiconductor optoelectronic devices, and relates to a preparation structure and method of a wavelength tunable surface emitting laser. Background technique [0002] The wavelength tunable vertical cavity surface emitting laser is a semiconductor electroluminescent device that directly converts electrical energy into optical energy. The characteristics are: the emitted light has monochromaticity, coherence, directivity and high brightness of a certain wavelength of laser light, and at the same time, the wavelength can be tuned arbitrarily within a certain range. Wavelength tunable vertical cavity surface emission has broad application prospects in dense wavelength division multiplexing optical networks, electronic communications, and computer optical interconnections. [0003] The basic physical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183H01S5/187H01S5/34H01S5/30
Inventor 郭霞关宝璐沈光地
Owner BEIJING UNIV OF TECH
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