Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silion carbide substrate gallium nitride high electronic transport ratio transistor and producing method

A technology with high electron mobility and silicon carbide substrates, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc. In order to achieve the effect of reducing electron scattering, improving channel electron mobility, and effectively limiting leakage

Inactive Publication Date: 2009-01-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, doping will reduce the integrity of the material lattice and generate ionized impurities, which will lead to a decrease in the crystal quality of the AlGaN layer, and an increase in the roughness of the interface between the GaN and AlGaN layers, so its mobility improvement effect not ideal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silion carbide substrate gallium nitride high electronic transport ratio transistor and producing method
  • Silion carbide substrate gallium nitride high electronic transport ratio transistor and producing method
  • Silion carbide substrate gallium nitride high electronic transport ratio transistor and producing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The key of the present invention is to use a new type of high-mobility gallium nitride thin layer as the channel layer in structure, and introduce a thin layer of aluminum nitride insertion layer between the gallium nitride channel layer and the aluminum gallium nitride barrier layer. By precisely controlling the growth conditions, such as temperature, pressure, and V / III ratio, the stress caused by lattice mismatch can be effectively relieved and the crystal quality of the channel layer can be improved, so as to epitaxially grow high-quality silicon carbide substrate nitride Gallium transistor structural material. The high-mobility GaN channel layer provides a good channel for the two-dimensional electron gas, which significantly improves the channel mobility and crystal quality. One of the functions of the aluminum nitride insertion layer is to use the binary compound to separate the channel electrons from the ternary compound aluminum gallium nitrogen barrier layer, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
temperatureaaaaaaaaaa
pressureaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The method includes steps: selecting a substrate of silicon carbide; using chemical vapor deposition method of metallorganics to develop a nucleation layer of high temperature aluminum nitride; developing not intended doped high resistance layer or high resistance layer with gallium nitride being doped on the nucleation layer of high temperature aluminum nitride under changed temperature; changing pressure in growth cabinet, developing not intended doped gallium nitride layer with high mobility on not intended doped high resistance layer, or high resistance layer with gallium nitride being doped; changing temperature of substrate, and pressure in growth cabinet, developing an interposed layer of aluminum nitride on not intended doped gallium nitride layer with high mobility; finally, developing aluminum - gallium - nitrogen on the interposed layer of aluminum nitride.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a gallium nitride high electron mobility transistor on a silicon carbide substrate and a manufacturing method thereof. Background technique [0002] Since traditional silicon and gallium arsenide-based high electron mobility transistors can no longer meet the needs of high temperature, high frequency, high power and radiation-resistant applications, people are prompted to develop new semiconductor material systems and devices to meet this need. As a typical representative of the third-generation wide-bandgap semiconductor, gallium nitride has excellent thermal and chemical stability, high breakdown voltage, high electron saturation drift velocity and excellent radiation resistance, and is especially suitable for the preparation of high temperature, high High electron mobility transistors with high frequency, high power and radiation resistance. Gallium nitride high electr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/335H01L21/20H01L29/02H01L29/772
Inventor 王晓亮胡国新马志勇冉学军王翠敏肖红领王军喜李建平曾一平李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com