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Plasma etching method

A technology of plasma etching and plasmaization, which is applied in the field of ion etching, can solve the problems that it is difficult to control the shape of the groove, the depth-to-diameter ratio of the groove shape cannot be satisfied at the same time, and the groove side wall is concave-convex, etc., and achieves the effect of high practical value

Active Publication Date: 2008-12-10
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to control the shape of the groove if one wants to make a groove with a high aspect ratio
[0013] However, if the conventional plasma etching method is used, it is necessary to repeat the etching process and the process of forming a protective film, so there is a problem that the trench side wall is uneven.

Method used

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Effect test

no. 1 Embodiment approach

[0073] figure 1 It shows the structure of the plasma etching apparatus of 1st Embodiment.

[0074] Plasma etching device is a kind of etching device such as ICP (Inductively Coupled Plasma) type, has following equipment: vacuum etching processing chamber 100, upper electrode 110 and lower electrode 120 in etching processing chamber 100, high-frequency power supply 130a, 130b and gas introduction port 140 and exhaust port 150.

[0075] The etching chamber 100 is an etching chamber, and its inner wall is made of an insulating material such as quartz, alumina, an aluminum base material treated with an alumina film (corrosion-resistant treatment), or yttrium oxide.

[0076] The high-frequency power sources 130a and 130b supply high-frequency power of, for example, 13.56 MHz.

[0077] The gas inlet 140 supplies gas to the etching chamber 100 .

[0078] The exhaust port 150 exhausts gas within the etching process chamber 100 .

[0079] Next, a method of trenching a silicon subs...

no. 2 Embodiment approach

[0089] In the plasma etching apparatus of the above-mentioned first embodiment, as the etching gas, a gas containing SF should be used. 6 Gas, O 2 For the mixed gas of gas and rare gas, high-frequency power of, for example, 13.56 MHz should be applied to the mixed gas. However, as an etching gas, even if it does not contain O 2 Mixed gas of gas, which contains SF 6 The same effect can also be obtained by applying a high-frequency power of 27 MHz or higher to a mixed gas of a fluorine compound gas such as gas and a rare gas.

[0090] Therefore, in the plasma etching apparatus of the second embodiment, as an etching gas, a gas containing SF 6 Fluorine compound gas such as gas and a mixed gas of a rare gas, and a high-frequency power of 27 MHz or more is applied to the mixed gas. Next, a description will be given centering on differences from the first embodiment.

[0091] Figure 4 It shows the structure of the plasma etching apparatus of 2nd Embodiment.

[0092] The plas...

no. 3 Embodiment approach

[0103] In the plasma etching apparatus of the above-mentioned first embodiment, as the etching gas, a gas containing SF should be used. 6 Gas, O 2 Gases and mixtures of rare gases. However, as an etching gas, even if the use contains SF 6 The mixed gas of fluorine compound gas, polymer forming gas, and rare gas can also achieve the same effect, and can suppress the etching of silicon substrates with insulating barrier layers under SOI (Silicon On Insulator) substrates, etc. When the lateral etching occurs.

[0104] That is: in the case of the plasma etching apparatus of the first embodiment, by O 2 Reaction products formed from the reaction with silicon protect the sidewalls of the trench. Therefore, on an SOI substrate, etc., once the barrier layer is exposed due to etching, the generation of reaction products will stop and the sidewall of the trench can no longer be protected. On the silicon substrate 910 near the barrier layer 920, such as Figure 6 The notch 900 is sh...

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Abstract

A plasma etching method for forming a trench having a side wall of smooth shape while simultaneously satisfying the requirement of the shape of the trench and the requirement of the aspect ratio. A silicon substrate is placed on a lower electrode (120). An etching gas is supplied through a gas introducing port. Exhaustion through an exhaust port (150) is performed. High-frequency power is fed to an upper electrode (110) and the lower electrode (120) from the high-frequency power supplies (130a, 130b) so as to change the etching gas into a plasma by an ICP method and to produce active species. Thus, the silicon substrate is etched. The etching gas is a mixture gas composed mainly of SF6 gas and additionally O2 gas and He gas.

Description

technical field [0001] The present invention relates to a plasma etching method, in particular to a plasma etching method for well forming trenches. Background technique [0002] In recent years, along with the miniaturization of electronic instruments, related semiconductor devices have been increasingly required to be miniaturized. Therefore, in order to isolate the elements of the semiconductor device and ensure the memory cell capacity area, the grooves and holes (via holes) formed on the silicon substrate are required to be, for example, a high aspect ratio (depth / groove or hole) of more than 40 hole diameter). Then, as a method of forming such high-aspect-ratio trenches and holes on a silicon substrate, there is a plasma etching method in which active species (ions and radicals) generated by plasmating an etching gas are used to treat the silicon substrate Etching is performed. Since the principle of the plasma etching method of the groove and the hole is roughly th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L21/76
Inventor 奥根充弘广岛满铃木宏之三宅清郎渡边彰三
Owner PANASONIC CORP
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