Photonic crystals splitter based on SOI and preparing method

Abstract

The invention involves a method based on SOI material photonic crystal splitter, including an SOI substrate material. In SOI silicon-etching produced the silicon column is the six-party or square lattice with the lattice. Silicon column height is the top of SOI silicon thickness, integrity in the lattice structure of silicon saving its column and forming splitter input waveguide, two output waveguide; input waveguide attached to the output waveguide two in the middle, with two output waveguide by a silicon-segregation. Front-end input waveguide also have at least one silicon column, the output waveguide also have at least the end of a silicon column. Connected with the outside, the SOI waveguide is placed in the input waveguide input, two output of the output waveguide. The SOI waveguide is of the same height of the silicon-contour. The splitter compact structure, its length than the conventional waveguide Y splitter narrow several times. By controlling the importation of isolation and the output waveguide, silicon waveguide column size can achieve different beam than the light output, therefore more flexibility and practicality.

Description

technical field [0001] The invention relates to a photonic crystal beam splitter used in the fields of optical communication, optical calculation, optical sensing, optical measurement, etc.; in particular, it relates to a photonic crystal beam splitter using SOI as a material and a manufacturing method. Background technique [0002] In the past half century, silicon-dominated microelectronics technology has made remarkable achievements, which has greatly promoted the arrival of the golden age of information technology. The monopoly position of silicon in the market and the huge advantages in technology attract people to continuously develop miniaturized and integrated silicon-based photonic devices to realize large-scale integrated photonic chips. [0003] Silicon-on-Insulator (Silicon-on-Insulator, SOI) is a unique silicon-based material system. The use of this material to make optoelectronic devices is conducive to compatibility with mature CMOS processes and to achieve la...

AI Technical Summary

Problems solved by technology

[0008] The object of the present invention is to overcome the deficiency that above-mentioned photonic crystal Y beam splitter exists, and the difficulty in making; Thereby provide a kind of broadband photonic crystal beam splitter and manufacturing method based on SOI material; This photonic crystal beam splitter and Compared with the traditional Y beam splitter, due to the use of photonic crystal waveguide, the length of the beam splitting area is less than 10 microns, which will greatly shorten the overall device length; compared with the ordinary photonic crystal Y beam splitter, it does not Defect columns need to be introduced, the manufacturing tolerance is larger, the design is more flexible, and it can be widely used in future photonic chips

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