Tin electrodeposits having properties or characteristics that minimize tin whisker growth
a technology of tin electrodes and tin whisker, which is applied in the direction of printed circuit aspects, conductive pattern reinforcement, and semiconductor/solid-state device details, etc. it can solve the problems of reducing the efficiency of electronic circuits, and reducing the occurrence of so as to minimize or prevent tin whisker formation or growth, and the effect of less prone to tin whisker formation or
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example 2
[0037] Tin was electroplated from a mixed acid sulfate electrolyte (“Technistan EP” from Technic Inc) onto a Cu alloy substrate (Cu99.85%, Sn0.15%) at a current density of 150 A / ft2 for a period of time sufficient to obtain an average of 10 μm tin deposit thickness. The grain size of the tin deposit was measured and found to be 1-2 microns avg. grain diameter. The deposit was subjected to high temperature & humidity (HTH) testing of 155 deg C. for 16 hrs (in an uncontrolled humidity environment) followed by 97 deg C. / 99% relative humidity (RH) conditions for 8 hrs. This deposit was measured by SERA and the tin oxide thickness on the surface was found to be 68 angstroms. This deposit was subjected to the high heat & humidity whisker test condition specified by JEDEC STANDARD JESD22A121 “Measuring Whisker Growth on Tin and Tin Alloy Surface Finishes”, specifically: high temperature / humidity storage of 60° C. / 90% RH for 3000 hrs. Upon completion of the whisker test method, the maximum ...
example 3
[0038] Tin was electroplated from a mixed acid sulfate electrolyte (“Technistan EP” from Technic Inc. which also contained a phosphorous compound at a concentration of 4 g / l in the plating solution as described in U.S. patent application Ser. No. 2004 / 0099340 A1) onto a Cu alloy substrate (Cu99.85%, Sn0.15%) at a current density of 150 A / ft2 for a period of time sufficient to obtain an average of 10 μm tin deposit thickness. The grain size of the tin deposit was measured and found to be 1-2 microns avg. grain diameter. The deposit was subjected to high temperature & humidity (HTH) testing of 155 deg C. for 16 hrs (in an uncontrolled humidity environment) followed by 97 deg C. / 99% relative humidity (RH) conditions for 8 hrs. This deposit was measured by SERA and the tin oxide thickness on the surface was found to be 43 angstroms. This deposit was subjected to the high heat & humidity whisker test condition specified by JEDEC STANDARD JESD22A121 “Measuring Whisker Growth on Tin and Ti...
example 4
[0039] Tin was electroplated from a mixed acid sulfate electrolyte (“Technistan EP” from Technic Inc. which also contained a phosphorous compound at a concentration of 4 g / l in the plating solution as described in U.S. patent application Ser. No. 2004 / 0099340 A1) onto a Cu alloy substrate (Cu99.85%, Sn0.15%) at a current density of 150 A / ft2 for a period of time sufficient to obtain an average of 10 μm tin deposit thickness. After tin plating the substrate was placed into a solution containing a phosphorous compound (phosphoric acid@70 ml / l)+sodium gluconate at 50 g / l. The grain size of the tin deposit was measured and found to be 1-2 microns avg. grain diameter. The deposit was subjected to high temperature & humidity (HTH) testing of 155 deg C. for 16 hrs (in an uncontrolled humidity environment) followed by 97 deg C. / 99% relative humidity (RH) conditions for 8 hrs. This deposit was measured by SERA and the tin oxide thickness on the surface was found to be 35 angstroms. This depo...
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