Electrolytically recoverable etching solution

An etching solution, electrolytic recycling technology, applied in chemical/electrolytic removal of conductive materials, printed circuits, electrical components, etc., can solve problems such as inability to recover quickly enough, limited etching speed, etc.

Active Publication Date: 2007-06-27
GEBR SCHMID GMBH & CO
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the etching rate is limited and the recovery process cannot be performed quickly enough to regenerate the etching solution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] Particularly preferred are the following etching solutions:

[0018] Solution 1:

[0019] 70 to 100 grams (gr.) per liter of copper corresponds to 275 to 400 grams per liter of copper sulfate pentahydrate (CuSO 4 ·5H 2 O);

[0020] 120 to 240 grams per liter of sulfate, corresponding to 165 to 330 grams per liter of ammonium sulfate ((NH 4 ) 2 SO 4 );

[0021] 0.3 to 0.6 liters of 25% ammonia solution (NH 4 OH);

[0022] 0.4 to 0.6 liters of distilled water per liter of etching solution;

[0023] 100 to 1000 mg of vanadium pentoxide (V 2 o 5 );

[0024] 10 to 100 mg of methylene blue (C 16 h 18 ClN 3 S).

[0025] Solution 2:

[0026] 85 grams of copper per liter corresponds to 330 grams per liter of copper sulfate (CuSO 4 ·5H 2 O);

[0027] 200 grams of sulfate per liter corresponds to 275 grams of ammonium sulfate per liter ((NH 4 ) 2 SO 4 );

[0028] 0.5 liters of 25% ammonia solution (NH 4 OH);

[0029] 0.5 liters of distilled water per liter...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an electrolytically recoverable etching solution, especially for etching printed boards and molded parts from copper and copper alloys. Said etching solution is substantially constituted of water, ammonia, copper (II) sulfate, ammonium sulfate and optionally a vanadium-containing catalyst for increasing etching speed. The inventive etching solution is characterized by additionally containing methylene blue or its derivatives as a catalyst.

Description

technical field [0001] The invention relates to an electrolytically recoverable etching solution, in particular for etching printed circuit boards and shaped parts of copper and copper alloys, which essentially consists of a certain content of water, ammonia, copper sulfate, ammonium sulfate and any Vanadium-containing catalyst composition selected to increase etch rate. Background technique [0002] Conventional etching solutions are used in various forms and embodiments, especially for etching printed circuit boards. In the manufacturing process, accelerating the etching process also plays a very important role, which requires that the recovery process of the etching solution should also be accelerated. [0003] In one method of preparing a printed circuit board, a circuit pattern is coated on a copper surface as a photoresist (Resist) pattern by screen printing or by optical processing. The copper surface not covered by the photoresist is then ablated with a suitable et...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23F1/34C23F1/46H05K3/06
CPCC23F1/34C23F1/46H05K3/067C09K13/00H05K3/0017
Inventor S·B·R·内迪
Owner GEBR SCHMID GMBH & CO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap