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Plasma treatment method and plasma etching method

A plasma and processing method technology, applied in the field of plasma etching, which can solve the problems of high global warming potential, difficult to obtain high verticality of etching profile, high etching rate, etc.

Active Publication Date: 2007-06-13
RESONAC CORP +1
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  • Application Information

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Problems solved by technology

[0036] However, in the treatment using this mixed gas, although the high etching rate and the smoothness of the etched surface can be maintained, and the verticality of the etched form can also be improved to a certain extent, it is difficult to obtain an etching profile that can be obtained by the Bosch process. high verticality
[0037] That is, the conventional technique cannot simultaneously satisfy the following three requirements for a processing technique: (1) a high etching rate can be obtained, (2) the verticality of the etching profile can be obtained, and (3) the etched wall surface has good smoothness
[0038] In addition, as mentioned above, fluorocarbon-based gases such as SF 6 gas, C 4 f 8 Gases and more have a high global warming potential problem

Method used

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Effect test

example 1

[0174] From fluorine gas (F 2 ) to generate continuous plasma, pulse time modulated plasma and neutral beam, then use QMS (quadruple mass spectrometer), microwave interferometer, emission spectrometer, Faraday cage and calorimeter to analyze the generated continuous plasma, pulse time Modulation of plasma and neutral beams.

[0175] First, the structure of the plasma and neutral beam analysis device shown in Fig. 4 is as follows. In the plasma and neutral beam analysis device shown in FIG. 4 , the plasma generation chamber 42 made of quartz is the same as that of the plasma generation and substrate processing chamber 2 made of quartz in the pulse time modulation plasma generation device shown in FIG. 1 . The structure is the same. The plasma generation chamber 42 has an inlet for feeding process gas 41, and an antenna 43 for generating inductively coupled plasma is wound around the periphery of the plasma generation chamber in a coil shape, and the antenna 43 and the antenna...

example 2

[0210] Through fluorine gas (F 2 ) pulse time modulated plasma to etch the substrate, measure the etching rate of silicon (Si) and observe the etching form.

[0211]

[0212] Using the pulse time modulation plasma generation device shown in Figure 2, the same 100 volume % fluorine gas (F 2 ) as processing gas 61 is introduced into the plasma generation and substrate processing chamber 62 at a rate of 30 mL / min, and an RF bias (1 kW) with a discharge frequency of 13.56 MHz is applied to the antenna 63 from a high-frequency power supply 64 to generate continuous plasma65.

[0213] An RF bias of 1 MHz was applied to a carbon electrode for accelerating ions 68 with a 50 W output of a power supply for applying a voltage 69 . By applying an RF bias to the electrode made of carbon for accelerating the ions 68 in this manner, cations and anions generated in the plasma 65 are accelerated in a direction almost perpendicular to the substrate holding base 70 and radiated onto the subs...

example 3

[0221] From fluorine gas (F 2 ) pulse time-modulates the plasma to selectively capture and neutralize negative ions to generate a neutral beam. Etching of the substrate is performed by neutral beam. To examine the composition of the neutral beam, measurements were made on polysilicon (poly-Si) and SiO using electrodes that acquired beams with different F group adhesion coefficients. 2 etch rate, and also observed the etched form of polysilicon.

[0222]

[0223] Using the neutral beam generating device shown in Figure 3, the same 100% by volume fluorine gas (F 2 ) is introduced into the plasma generation chamber 22 at a rate of 30 mL / min as the processing gas 21, and a 1 kW RF bias with a discharge frequency of 13.56 MHz (at the turn-on time) is applied to the antenna 23 from a high-frequency power supply 24 in a pulsed state, To generate pulse time modulated plasma. In this step, the on time / off time in the pulse time modulation is 50 microseconds / 50 microseconds.

[0...

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Abstract

The invention develops a plasma treatment method using a gas free of a greenhouse effect in order to realize the global environmental preservation, and the plasma process of high performance, the invention also provides a plasma etching method which inhibits a damage to a device, and has high accuracy. The plasma processing method according to the invention comprises following steps: supplying a treatment gas containing a fluorine gas (F2) into a plasma producing chamber, repeating applying / its stopping of a high frequency electric field alternately to generate a plasma, and irradiating the plasma on a substrate to carry out the substrate treatment. Further, the substrate processing can be performed as following: a neutral particle beam is produced by extracting a negative ion or a positive ion from the plasma separately individually, or alternately by extracting only a negative ion selectively to neutralize the plasma, and the neutral particle beam is irradiated to the substrate.

Description

[0001] Cross References to Related Applications [0002] This application, filed under 35 U.S.C §111(a), claims priority under 35 U.S.C §119(e) to provisional application 60 / 589,574, filed July 21, 2004, under 35 U.S.C §111(b). technical field [0003] The present invention relates to a plasma processing method for processing a substrate using a plasma generated using a high-frequency electric field, and to a plasma suitable for fine processing in the manufacture of semiconductor elements and micromechanical (MEMS: Micro Electro Mechanical System) elements bulk etching method. Background technique [0004] In the plasma process used for dry etching in the manufacture of semiconductor integrated circuits, a large amount of fluorocarbon or inorganic fluoride gas (for example, carbon tetrafluoride gas (CF 4 ), sulfur hexafluoride gas (SF 6 )etc). However, fluorocarbon or inorganic fluoride gas is a greenhouse gas, which has a high global warming potential (GWP), and is a lar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/311H01L21/3213
CPCH01L21/3065H01L21/32137H01L21/31116
Inventor 星野恭之寒川诚二
Owner RESONAC CORP
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