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Nitride-based semiconductor substrate and method of making the same

A technology of nitride system and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, chemical instruments and methods, etc., can solve the problems such as the difficulty of offset between the substrate and the crystal lattice, and the obstacles of high-brightness LEDs. Achieve the effects of high conductivity, high reliability, high efficiency and high reliability

Active Publication Date: 2007-05-09
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] By using this low-temperature-grown nitride layer as a buffer layer, GaN single crystal epitaxial growth can be performed. However, in this method, it is still difficult to shift the lattice between the substrate and the crystal, and there are countless kinds of GaN after growth. defect
This defect is expected to be an obstacle in the production of GaN-based LDs and high-brightness LEDs

Method used

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  • Nitride-based semiconductor substrate and method of making the same
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  • Nitride-based semiconductor substrate and method of making the same

Examples

Experimental program
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Effect test

Embodiment 1

[0064] (example of method using a)

[0065] Fig. 4 shows an example of the HVPE reactor used in this example.

[0066] This HVPE reaction furnace 10 is a hot-wall type in which a heater 2 is installed on the outside of a horizontally long quartz reaction tube 1 to heat it. 3 gas NH 3 An introduction pipe 3, an HCl introduction pipe 4 for introducing HCl gas for forming GaCl as a group III raw material, and a doping pipe 5 for introducing a dopant gas for controlling conductivity. In addition, the diameter of the HCl introduction pipe 4 is enlarged in the middle to form a Ga melt storage tank 6, which can accommodate Ga melt 7. On the other hand, on the right side (downstream side) of the figure of the quartz reaction tube 1, there is provided a substrate holder 9 on which an underlying substrate 8 is disposed, and is freely rotatable and movable.

[0067] When using the HVPE reactor 10 to grow GaN, first 3 Introductory tube 3 introduces NH as a V-group raw material 3 As f...

Embodiment 2

[0073] (Example of method using a+b+c)

[0074] According to the steps shown in FIG. 5, a GaN free-standing substrate was produced.

[0075] First, a sapphire substrate 11(a) having a diameter of 2 inches is prepared as an underlying substrate, and a GaN film 12(b) having a thickness of 300 nm is formed on the sapphire substrate 11 by the MOVPE method. After (c) a Ti film 13 with a thickness of 20 nm was vacuum-evaporated thereon, in H 2 and NH 3 mixed atmosphere (H 2 The heat treatment was performed at 1000° C. for 30 minutes at a gas partial pressure of 80 kPa. After heat treatment, the Ti film 13 on the surface of the substrate is nitrided, and at the same time, due to the agglutination, it becomes porous TiN14 (d) with many micropores of tens of microns.

[0076] This was placed in the HVPE furnace shown in FIG. 4 to grow a GaN thick film 17 with a thickness of 500 μm. At this time, adjust the H 2 The flow rate of the carrier gas was such that the residence time of t...

experiment example

[0088] Using the GaN free-standing substrates obtained in Example 2 and the prior art example, LEDs having the same structure were fabricated. Both drive voltages were good at about 3.8V when energized at 20mA. However, as a result of comparing the light output, the LED produced on the GaN free-standing substrate obtained in Example 2 was about 30% larger. The reason for this is considered to be that the GaN free-standing substrate of Example 2 has high transparency, and light generated in the active layer is efficiently emitted.

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Abstract

The present invention provides a nitride-based semiconductor substrate having a small light absorption coefficient and high transparency, and capable of securing sufficient electroconductivity, and its manufacture method. After forming a GaN film 12 and a Ti film 13 on a sapphire substrate 11, the substrate is heated in a mixed atmosphere of a hydrogen gas and an ammonia gas to convert the Ti film into a porous TiN thin film 14, then a facet-grown GaN 15 is formed on the porous TiN thin film 14, the GaN crystal is grown so that the thickness of GaN layer in the initial growth stage growing while forming facet faces other than c face becomes less than 30% of total thickness of the finally grown GaN layer to obtain a GaN thick film 17, and peeling the GaN thich film from the sapphire substrate 11 through voids 16.

Description

technical field [0001] The present invention relates to a nitride-based semiconductor substrate and a method for manufacturing the same, and more particularly, to a nitride-based semiconductor substrate capable of ensuring sufficient electrical conductivity with a small light absorption coefficient and high transparency, and a method for manufacturing the same. Background technique [0002] GaN-based compound semiconductors such as gallium nitride (GaN), indium gallium nitride (InGaN), and aluminum gallium nitride (AlGaN) are attracting attention as materials for blue light-emitting diodes (LEDs) and laser diodes (LDs). In addition, taking advantage of the excellent heat resistance and environmental resistance, the development of components for electronic devices is also beginning. [0003] As a substrate for growing a CaN-based compound semiconductor, a single crystal sapphire substrate has hitherto been used. [0004] However, due to the difference in lattice constant bet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/20C30B29/38H01L33/32
CPCH01L21/02639H01L21/02647H01L21/02491H01L21/0262H01L21/02513C30B29/406H01L21/0242C30B25/02H01L21/0254
Inventor 大岛佑一
Owner SUMITOMO CHEM CO LTD
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