Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Minute pattern photoetching method

A lithography pattern and micro technology, applied in microlithography exposure equipment, photolithography process exposure devices, electrical components, etc., can solve the problems of high price, high cost, increase the complexity of the production process, etc., to improve productivity, simplify The effect of mass production process and cost reduction

Inactive Publication Date: 2006-09-06
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the exposure equipment used for lithography is expensive, these methods are costly and will increase the complexity of the production process to varying degrees.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Minute pattern photoetching method
  • Minute pattern photoetching method
  • Minute pattern photoetching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention provides a method for fine photoetching patterns, which mainly includes coating a layer of bottom layer resin on the entire surface of the etched substrate layer; coating a layer of photoresist on the upper surface of the bottom layer resin layer; The layer is exposed to the required pattern and baked after the exposure; the photoresist layer and the bottom resin layer are developed in the developer, and the photoresist pattern is formed on the photoresist and the bottom resin layer; the photoresist and the bottom resin layer are used as the etching The etching stop layer is selectively etched to transfer the pattern to the substrate.

[0033] According to the method of the present invention, the substrate material can be any thin film material that is usually used in the manufacture of semiconductors such as DRAM, which is etched or ion implanted to transfer a pattern or form a desired pattern in a specific area.

[0034] According to the present inve...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

With improved DUV photoresist and bottom resin, this invention can decrease photoresist thickness to less than 0.11ª–m for safe height-width ratio to improve picture resolution and size evenness, exposure tolerance and focusing depth of key parts, and reduces cost.

Description

Technical field [0001] The present invention relates to a micro-lithography pattern method, in particular to a method of using a deep ultraviolet (Deep UltraViolet) photoresist (hereinafter referred to as DUV photoresist) and an underlying resin to perform a micro-lithography pattern. Background technique [0002] In the production process of semiconductor devices such as VLSI, lithography is one of the most important steps. All the patterns and doping regions of the thin films related to the structure of the MOS device are determined by photolithography. [0003] In photolithography, the photosensitive material photoresist is applied to the semiconductor wafer substrate, and the photoresist is irradiated on the photoresist through a specific photomask, because the photomask has patterns that reflect the incident light from the light source , The light beam that has not been reflected and passed through the photomask also has the same pattern as the photomask, and the photoresist...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20H01L21/027
Inventor 崔彰日
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com