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Hydride gas purification for the semiconductor industry

A technology of hydride and gas, which is applied in the direction of hydride purification/stabilization, chemical instruments and methods, and the use of solid contact hydrogen separation, etc., which can solve the problems of increasing system costs, purification device failure, and high cost, and achieve the ability to remove pollutants increased effect

Active Publication Date: 2006-08-30
ENTEGRIS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently used process methods are expensive due to the very short lifespan of the purification materials and the need for constant replacement
Additionally, because it is difficult to accurately determine the rate of degradation of purge materials in the presence of reactive hydride gases, users of these purge materials must schedule their disposal and replacement at intervals shorter than the shortest expected useful life
Otherwise, there will be a failure of the purification device, resulting in the risk of contamination of the product
Thus, the current system results in many, if not most, decontamination devices having to be discarded while they still have some degree of useful life, thereby further increasing the cost of system operation

Method used

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  • Hydride gas purification for the semiconductor industry
  • Hydride gas purification for the semiconductor industry
  • Hydride gas purification for the semiconductor industry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Analysis of purified substrates C and D containing lanthanides.

[0056] purpose

[0057] The purpose of the following test is to evaluate the performance of materials C and D by testing their respective pollutant removal capabilities for moisture, oxygen and carbon monoxide. The composition of the medium is listed above. The release of carbon monoxide at high temperatures was also tested for both media. The test results of the two materials are compared.

[0058] experimental method

[0059] Fill the first group of three Aeronex 70K purification tanks with medium C, and fill the second group of three 70K purification tanks with medium D. 95%Ar / 5%H at 375℃ and 1slm 2 Activate the medium for 40 hours under purge gas.

[0060] Oxygen capacity

[0061] Test a 70K-C media purifier and a 70K-D media purifier in parallel. The oxygen capacity test parameters include: 6.5ppm oxygen challenge, 30psig test gas pressure and 3slm air flow through each test purifier. The breakthrough of...

Embodiment 2

[0084] Release of carbon monoxide from the hydride gas purifier

[0085] purpose

[0086] The purpose of the following experiment is to compare the current hydride gas purifier technology (A medium) taught by Alvarez 6,241,955 with the new hydride gas purifier material (E medium) of the present invention in terms of carbon monoxide release at room temperature and high temperature. The carbon monoxide capacity of each medium was also tested.

[0087] experimental method

[0088] Fill the first Aeronex 70K purifier with medium A and the second 70K purifier with medium E. The composition of the medium is shown above.

[0089] Use 1slm 95%Ar / 5%H at 375℃ 2 Purge gas activates the purifier for 40 hours. A Hewlett-Packard GC equipped with a methanizer and FID was calibrated to measure carbon monoxide at the ppb level. The standard addition method using a steel cylinder containing 351ppm CO in nitrogen is adopted. The CO release of each experimental purifier was measured at room temperatu...

Embodiment 3

[0099] Compare the water removal and oxygen removal capabilities of non-lanthanide and lanthanide media.

[0100] purpose

[0101] The purpose of the following test is to evaluate the performance of A, B and E media by measuring their respective pollutant removal capabilities for moisture and oxygen. E medium is a medium based on lanthanides. Medium C is a medium based on manganese oxide. Medium A is a ferromanganese material currently used for hydride gas purification. The composition of all media is given above.

[0102] experimental method

[0103] Fill two Aeronex 70K purification tanks with A, B or E respectively, for a total of six purification tanks. At 375℃ and 1slm 95%Ar / 5%H 2 The filled purification tank is activated under cleaning air for 40 hours.

[0104] Oxygen capacity

[0105] The oxygen capacity test parameters include: 6.5ppm oxygen task, 30psig test gas pressure and 3slm gas flow through each test purifier. The breakthrough of each purifier was tested every work...

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PUM

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Abstract

A method for hydride gas purification uses materials having at least one lanthanide metal or lanthanide metal oxide. The method reduces contaminants to less than 100 parts per billion (ppb), preferably 10 ppb, more preferably 1 ppb. The material can also include transition metals and transition metal oxides, rare earth elements and other metal oxides. The invention also includes materials for use in the method of the invention.

Description

[0001] Related application [0002] This application requires the rights of U.S. Provisional Application No. 60 / 488,850 filed on July 21, 2003 and U.S. Provisional Application No. 60 / 513,351 filed on October 22, 2003. The entire teaching of the above application is incorporated herein by reference. Background technique [0003] Hydride gases, especially ammonia, are used in many processes including semiconductor and LEDs manufacturing. Other hydride gases are also used, such as arsine (AsH 3 ) And phosphine (PH 3 ) To manufacture semiconductor films such as gallium arsenide (GaAs) and gallium phosphide (GaP), which are used in high-speed data transmission equipment, cellular phones, video phones, and commercial satellites. Other hydride gases used in semiconductor manufacturing include diborane (B 2 H 6 ), disilane (Si 2 H 6 ), germane (GeH 4 ) And silane (SiH 4 ). For the present invention, hydrogen is also regarded as a hydride gas. [0004] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/28B01D53/62B01D53/50B01D53/56C01B6/34C01B3/56C01C1/02C01B33/04C01B25/06
Inventor 小丹尼尔·阿尔瓦拉兹杰弗里·J.·施皮格尔曼乔舒亚·T.·库克湛·端·阮丹尼尔·A.·列夫特洛伊·B.·斯科金斯
Owner ENTEGRIS INC
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