Organic thin film transistor and manufacturing method thereof

A technology of organic thin film and production method, applied in semiconductor/solid-state device manufacturing, electric solid-state device, semiconductor device, etc., can solve the problem of insufficient surface roughness, and achieve the effect of stable working characteristics

Inactive Publication Date: 2006-05-03
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the method of fabricating a transistor directly on a substrate whose shape is not fixed and whose surface flatness is worse than that of a silicon wafer, such as a glass epoxy substrate, the method of obtaining the desired surface roughness on the surface of the gate electrode has not been sufficiently found. method

Method used

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  • Organic thin film transistor and manufacturing method thereof
  • Organic thin film transistor and manufacturing method thereof
  • Organic thin film transistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0061] Figure 4-8 It is a schematic diagram of the fabrication method of the organic thin film transistor of the present invention. exist Figure 4 In, reference numeral 401 denotes a substrate, and 402 denotes a conductor film. As for the substrate 401 and the conductor film 402, for example, a glass epoxy substrate integrated with copper foil, that is, a commercially available printed circuit board. In this example, a substrate having a thickness of 0.2 mm in which a copper foil (produced by Hitachi Chemical Co., Ltd., model: FR-4) having a thickness of 35 µm as a conductor film was used. A large number of substrates are structured with conductive films on both sides. However, according to the description of the present invention, it is not necessary to have a conductor film on one surface, so it is omitted here. exist Figure 4-8 The same reference numerals denote the same parts.

[0062] Next, the conductor film is patterned so that it becomes a desired gate shape. ...

example 2

[0075] An organic thin film transistor was fabricated as in Example 1, except that polyethylene terephthalate (PET) was used as the substrate and gold was used as the gate electrode. For organic thin film transistors, the relationship between the average surface roughness Ra of the gate electrode surface and the defective rate was examined.

[0076] The PET used was an OHP film, 0.1 mm thick, A4 size. It was cut to the card size (86mm x 54mm) as in Example 1.

[0077] The gold film that will later become the gate electrode is fabricated in a vacuum evaporation system using a resistively heated tungsten boat and using a mask. In order to improve the contact between the gold film and the substrate, a thin chromium film is made as the bottom layer first. The thickness of the gold film was 0.5 μm, and the thickness of the chromium film was 0.1 μm.

[0078] Next, the laminated film of the chromium film and the gold film to be the gate electrode is polished by CMP. Adjust the po...

example 3

[0082] A 25 μm thick polyimide sheet was used as the organic substrate. Copper foil with a thickness of 25 μm is plated on the substrate. Four substrates grown with copper foil were prepared.

[0083] These four substrates were subjected to four surface treatments: unpolished, soft-etched, polished tape, and CMP.

[0084] The conditions of each surface treatment are as follows.

[0085] (processing conditions)

[0086] Soft corrosion treatment: immerse the substrate in 5% sulfuric acid for 30 seconds, and then rinse it with flowing deionized water for 2 minutes.

[0087] Polishing belt treatment: polishing belt (model: K8000); polishing time 60 seconds; belt feeding speed 1m / 30 seconds; roller pressure 2kgf / cm 2 .

[0088] CMP treatment: Shibaura polishing fluid CHS-3000EM; cylinder pressure 5kg; polishing tray and polishing disk rotation speed 80rpm; polishing time 25 minutes.

[0089] Each of the above-treated substrates was cut into a square size of 17 mm. Then, the ...

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Abstract

An organic thin film transistor is provided, comprising an organic substrate, a gate electrode, a gate insulating film, an organic semiconductor film, a source electrode and a drain electrode, and in the organic thin film transistor, the average surface roughness Ra of the gate electrode in contact with the gate insulating film 0.1-15nm. Such an organic thin film transistor can have stable performance characteristics even if its conductor film used as a gate electrode is fabricated on a substrate whose shape is not fixed and whose flatness is worse than that of a silicon wafer, such as a glass epoxy substrate.

Description

technical field [0001] The invention relates to an organic thin film transistor using an organic semiconductor material and a manufacturing method thereof. Background technique [0002] In recent years, the development of thin film transistors using organic semiconductor materials (hereinafter referred to as "organic thin film transistors") has been accelerated. With organic materials, the process temperature is reduced. Therefore, it is expected that transistors can be inexpensively fabricated over a large area. Organic thin film transistors are expected to be used as drive circuits for thin displays and electronic paper, radio frequency identification cards (RF-ID), IC cards, and the like. There are several technical review articles (see for example, C.D. Dimitrakopoulos, et al. "Organic Thin Film Transistors for Large Area Electronics", Advanced Material, 2002, 14, No. 2, pp. 99-117). [0003] image 3 An example of an organic thin film transistor structure is shown. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/10H01L51/05H01L51/40H05B33/26
CPCH10K71/60H10K10/468H10K10/466
Inventor 小金井昭雄诸田孝光
Owner CANON KK
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