Method for making RF solenoid micro-inductor based on micro electro-mechanical system
A technology of micro-electromechanical systems and manufacturing methods, applied in the field of microelectronics, can solve problems affecting device performance, metal oxidation, etc., and achieve the effects of good repeatability, high operating frequency, and improved flatness
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Embodiment 1
[0024] (1) Deposit a Cr / Cu bottom layer on the cleaned glass substrate with a thickness of 100 nm. For positive resist AZ4000 series, the photoresist thickness is 5 μm, the photoresist drying temperature is 95°C, and the drying time is 30 minutes; after exposing and developing the glass substrate on one side, the Cr / Cu bottom layer is etched by physical methods, and finally Remove all photoresist with acetone; sputter 300nm aluminum oxide film, and finally get double-sided overlay alignment symbols;
[0025] (2) Deposit a Cr / Cu bottom layer on the other side of the glass substrate with a thickness of 100 nm. The following processes are carried out on this surface.
[0026] (3) Shake the positive resist, the thickness of the photoresist is 10 μm, the drying temperature of the photoresist is 95 ° C, and the time is 30 minutes; expose and develop to obtain the bottom coil pattern; then electroplate the copper bottom coil with a thickness of 10 μm;
[0027] (4) Shake the positiv...
Embodiment 2
[0040] (1) Deposit a Cr / Cu bottom layer on the cleaned glass substrate with a thickness of 100 nm. The photoresist is AZ4000 series, the thickness of the photoresist is 6 μm, the drying temperature of the photoresist is 95 ° C, and the drying time is 30 minutes; after the glass substrate is exposed and developed on one side, the Cr / Cu bottom layer is etched by physical methods, and finally Remove all photoresist with acetone; sputter 300nm aluminum oxide film, and finally get double-sided overlay alignment symbols;
[0041] (2) Deposit a Cr / Cu bottom layer on the other side of the glass substrate with a thickness of 100 nm. The following processes are carried out on this surface.
[0042] (3) Shake the positive resist, the thickness of the photoresist is 5 μm, the drying temperature of the photoresist is 95 ° C, and the time is 30 minutes; expose and develop to obtain the bottom coil pattern; then electroplate the copper bottom coil with a thickness of 10 μm;
[0043] (4) Sh...
Embodiment 3
[0056] (1) Deposit a Cr / Cu bottom layer on the cleaned glass substrate with a thickness of 100 nm. For positive resist AZ4000 series, the thickness of the photoresist is 8 μm, the drying temperature of the photoresist is 95°C, and the drying time is 30 minutes; Remove all photoresist with acetone; sputter 300nm aluminum oxide film, and finally get double-sided overlay alignment symbols;
[0057] (2) Deposit a Cr / Cu bottom layer on the other side of the glass substrate with a thickness of 100 nm. The following processes are carried out on this surface.
[0058] (3) Shake the positive resist, the thickness of the photoresist is 8 μm, the drying temperature of the photoresist is 95 ° C, and the time is 30 minutes; expose and develop to obtain the bottom coil pattern; then electroplate the copper bottom coil with a thickness of 10 μm;
[0059] (4) Shake the positive resist, the thickness of the photoresist is 10 μm, the photoresist drying temperature is 95 ° C, and the time is 6...
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