Dry etch post process method

Abstract

This invention relates to a method for dry etching treatment, characterized in using SF6 gas into room, and ashing the surface of product after dry etching treatment and residue on the dry etched wall in room. The method can effectively eliminate the dry-etching residue and guarantee the product quality, clean the device, reduce the times of cleaning and servicing device and lengthen the time of usage.

Description

【Technical field】 [0001] The invention relates to a semiconductor manufacturing process, in particular to a post-dry etching treatment method. 【Background technique】 [0002] Dry etching (Dry Etching) is a processing method widely used in the semiconductor industry. It usually first covers the photoresist layer on the semiconductor layer to be etched, and then uses a photomask to expose the photoresist layer to form a specific pattern, and then introduces a dry etching gas such as O into the etching chamber. 2 , SF 6 and CF 4 Etching the semiconductor layer, and finally forming a predetermined pattern on the semiconductor layer to be etched under the protection of the photoresist layer. [0003] However, during the dry etching reaction, a polymer is generated and deposited on the semiconductor layer. Due to the high resistance of the polymer, it is easy to cause an electrical connection error of the product. It is therefore necessary to employ a post-treatment step for t...

AI Technical Summary

Problems solved by technology

[0007] In order to overcome the defect that the dry etching post-processing method in the prior art is difficult to completely remove the polymer, which leads to product electrical connection errors and low yield, the present invention provides a dry etching post-processing method with higher yield

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