Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thermal interface material and its production method

A technology of thermal interface material and manufacturing method, which is applied in the direction of heat exchange materials, chemical instruments and methods, etc., can solve the problems of high thermal conductivity of thermal interface materials, large thickness of thermal interface materials, and unordered arrangement.

Inactive Publication Date: 2005-06-29
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] U.S. Patent No. 6,407,922 discloses a thermal interface material that uses carbon nanotubes to conduct heat. It combines carbon nanotubes with silver colloidal matrix to form a thermal interface material through injection molding. The thermal interface material has two The area of ​​the heat conduction surface is not equal, and the area of ​​the side in contact with the heat sink is larger than the area of ​​the side in contact with the heat source, which can help the heat sink to dissipate heat, but the thermal interface material prepared by this method has shortcomings. The thickness of the thermal interface material produced by this method is relatively large, resulting in a high thermal conductivity of the thermal interface material, increasing the volume of the thermal interface material, which is not compatible with the trend of device miniaturization, and the thermal interface material lacks flexibility; Second, carbon nanotubes are not arranged in an orderly manner in the matrix material, and it is difficult to ensure the uniformity of their distribution in the matrix, so the uniformity of heat conduction is also affected, and the advantages of longitudinal heat conduction of carbon nanotubes are not fully utilized, which affects the thermal interface. The thermal conductivity of the material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thermal interface material and its production method
  • Thermal interface material and its production method
  • Thermal interface material and its production method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0024] see figure 1 and figure 2 Firstly, a catalyst layer 12 is uniformly deposited on a substrate 11, and the method can be accomplished by thermal deposition, electron beam deposition or sputtering. The material of the substrate 11 can be glass, quartz, silicon or alumina. In this embodiment, porous silicon is used, the surface of which is a porous layer, and the diameter of the pores is extremely small, generally less than 3 nanometers. The material of the catalyst layer 12 can be iron, cobalt, nickel and alloys thereof, and iron is selected as the catalyst material in this embodiment.

[0025] Oxidize the catalyst layer 12 to form catalyst particles (not shown in the figure), and then place the substrate 11 distributed with the catalyst in a reaction furnace (not shown in the figure), and feed carbon source gas at 700-1000 degrees Ce...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a conducting hot interface material based on array of carbon nm pipes, comprising a silver glue matrix which includes a first surface and a second surface corresponding to the first one, several carbon nm pipes distributing in the silver glue matrix which is comprised of pure silver particle, boron nitride particle and synthesized oil, the carbon nm pipes are parallel to each other and extend from the first surface to the second one of the silver glue matrix. Besides, the preparing method of the heat interface material is also disclosed, including the following steps: supply an array of carbon nm pipe which are placed on a base, use silver glue to coat it, solidify the silver glue to form the hot interface material, than put it solidified away from the base.

Description

【Technical field】 [0001] The invention relates to a thermal interface material and a manufacturing method thereof, in particular to a thermal interface material using carbon nanotubes for heat conduction and a manufacturing method thereof. 【Background technique】 [0002] In recent years, with the rapid development of semiconductor device integration technology, the integration of semiconductor devices is getting higher and higher, but the device volume is getting smaller and smaller, and its demand for heat dissipation is getting higher and higher, which has become an increasingly increasingly important issue. In order to meet this need, various heat dissipation methods such as fan heat dissipation, water cooling auxiliary heat dissipation and heat pipe heat dissipation are widely used, and a certain heat dissipation effect has been achieved. However, due to the uneven contact interface between the heat sink and the semiconductor integrated device, the general mutual contact...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K5/14
Inventor 吕昌岳余泰成陈杰良
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products