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Process for preparing boron nitride nano tube

A technology of boron nitride nanotubes and boron oxide, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of low purity and low yield of boron nitride nanotubes

Inactive Publication Date: 2005-03-02
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

They obtained boron nitride nanotubes with low purity and low yield due to heat treatment under flowing nitrogen

Method used

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  • Process for preparing boron nitride nano tube
  • Process for preparing boron nitride nano tube
  • Process for preparing boron nitride nano tube

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Effect test

Embodiment 1

[0021] Embodiment 1: With the boron powder that purity is 99.8% as raw material, after ball milling for a certain period of time, feed flowing ammonia in the vacuum tube furnace for heating, the flow rate of ammonia is 100ml / min, and the speed of temperature rise is 10°C / min . When the temperature reaches 1000°C, keep at constant temperature for another 6 hours. Wash the sample several times with dilute hydrochloric acid, distilled water and ethanol, and dry it in a vacuum oven to obtain a white powder, which is the prepared boron nitride nanotubes with bamboo structure.

Embodiment 2

[0022] Embodiment 2: With the boron powder that purity is 99.8% as raw material, feed the ammonia gas of flowing in the vacuum tube furnace after ball milling for a certain period of time to heat, the flow velocity of ammonia gas is 100ml / min, the speed of heating up 10 ℃ / min . When the temperature reaches 1200°C, keep at constant temperature for another 6 hours. A white powder is obtained, which is the prepared boron nitride nanotubes mainly having a cylindrical structure and a small amount of bamboo structure.

Embodiment 3

[0024] A certain proportion of boron powder (purity 99.8%) and Fe 2 o 3 (Analytical pure) After ball milling, feed flowing ammonia in the vacuum tube furnace for heating, the flow rate of ammonia is 100ml / min, and the rate of temperature rise is 6-10°C / min. When the temperature reaches 1300°C, keep at constant temperature for another 3 hours. Wash the sample several times with dilute hydrochloric acid, distilled water and ethanol, and dry it in a vacuum oven to obtain a white powder, which is the prepared boron nitride nanotube.

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Abstract

The present invention relates to the process of preparing boron nitride nanotube, and relates to inorganic nanometer material. Non-toxic boron compound, such as boron chloride, boric acid, etc. as material is first ball ground for certain time, and then heated to over 800 deg.c in flowing ammonia or nitrogen and maintained for over 0.5 hr. The product after being cooled is cleaned in dilute hydrochloric acid, distilled water and alcohol and dried to obtain white powder as the boron nitride nanotube product. The process is simple, mild in condition and suitable for mass production, and has yield over 80 %. The prepared boron nitride nanotube is semiconductor and may be used in nanometer electronic device, nanometer structural ceramic material, hydrogen storing material, etc.

Description

technical field [0001] The invention is a new method for preparing boron nitride nanotubes with high purity and high yield, and relates to inorganic nanometer materials. Background technique [0002] Boron nitride nanotubes are a very special nanotubular material. It has stable insulation, high thermal and chemical stability, and special mechanical and electrical properties. In recent years, the field of one-dimensional nanomaterials has received great attention. Electronic structure calculations show that boron nitride nanotubes are a semiconductor material with a fixed energy band width (5.5ev). Unlike carbon nanotubes, the banding does not depend on tube diameter, chirality, or nanotube wall number. Therefore, boron nitride nanotubes simplify the complexity of the energy bands of one-dimensional nanotubes, making it possible to manufacture nanoscale semiconductor elements, and provide an attractive prospect for the research and application of one-dimensional nanostruct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/064
Inventor 曹传宝籍凤秋
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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