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Semiconductor laser and method for manufacturing same

A manufacturing method, semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve problems such as the inability to prevent sequential tapers, the difficulty in forming vertical ridge sides, and the difficulty in ensuring that the corrosion stop layer stops corrosion, etc. , to achieve high output

Inactive Publication Date: 2004-01-14
KK TOSHIBA
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Problems solved by technology

This etching can be done by wet etching, but dry etching such as reactive ion etching (RIE) is difficult to ensure that the corrosion is stopped by using an etch stop layer
Therefore, wet etching must be used to etch in order to form the ridges, and in practice, the ridge shape does not prevent having a sequential tapered
[0007] As described above, in general, in semiconductor lasers having ridges, it is difficult to form vertical ridge sides, which is a factor preventing the realization of high output lasers

Method used

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  • Semiconductor laser and method for manufacturing same
  • Semiconductor laser and method for manufacturing same
  • Semiconductor laser and method for manufacturing same

Examples

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no. 1 example

[0038] The structure of a red semiconductor laser according to a first embodiment of the present invention is shown in FIGS. 1A and 1B. The n-type GaAs buffer layer 11 , the n-type InGaAlP cladding layer 13 , the MQW active layer 4 composed of undoped InGaAlP / InGaP, and the p-type InGaAlP cladding layer 15 are formed on the n-type GaAs substrate 10 . As shown in FIG. 1B , a striped ridge is formed on the p-type InGaAlP cladding layer 15 , and the striped ridge is composed of a p-type InGaP etch stop layer 16 , a p-type InGaAlP cladding layer 17 and a p-type InGaP capping layer 18 .

[0039] The ridge functions as a current gathering part, and its sides are treated substantially vertically. In addition, the bottom of the p cladding layer 17 and the etch stop layer 16 have a wider width than any other region. The sides of the ridge may embed an n-type InAlP barrier layer 25, and a p-type GaAs contact layer 26 is formed on the capping layer 18 of the ridge and planarizes the bar...

no. 2 example

[0058] In the red semiconductor laser according to the second embodiment of the present invention, the blocking layer 45 is made of SiO 2 form, as shown in Figure 4.

[0059] An n-type GaAs buffer layer 31, an n-type InGaAlP cladding layer 33, an MQW active layer 34 composed of undoped InGaAlP / InGaP, and a p-type InGaAlP cladding layer 35 are formed on an n-type GaAs substrate 30. A strip-shaped ridge composed of the etch stop layer 36 , the p-type InGaAlP cladding layer 37 , the p-type InGaP capping layer 38 and the p-type GaAs contact layer 46 is formed thereon.

[0060] The sides of the ridge are processed substantially vertically, and the bottom of the p cladding layer 37 and the etch stop layer 36 have a wider width than any other region. The sides of the ridge can be embedded with SiO 2 film (barrier layer) 45, and planarize the surface. In addition, a p-side electrode 47 is formed on the ridge of the contact layer 46 and the SiO 2 On the film 45 , an n-side electrod...

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Abstract

A semiconductor laser includes a substrate, a double hetero structure portion formed on the substrate, the double hetero structure including a first clad layer formed on the substrate, an active layer formed on the first clad layer and a second clad layer formed on the active layer, the second clad layer having a stripe-form projection on an upper surface thereof, the projection having an upper portion whose sidewalls are substantially vertically formed on the surface of the substrate and a step-shaped lower portion whose line width is larger than that of the upper portion, and a current blocking layer formed extending from side surfaces of the projection to the upper surface of the second clad layer except an upper surface of the projection.

Description

[0001] Cross References to Related Applications [0002] This application is based on and claims the benefit of priority from Japanese Patent Application No. 2002-161814 filed on June 3, 2002, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a semiconductor laser having a ridge-shaped current collecting portion, and more particularly to a semiconductor laser obtained by changing the shape and a method of manufacturing the same. Background technique [0004] In recent years, a semiconductor laser having a ridge-shaped current collecting portion (ridge) in a double heterostructure has been developed as a light source with a short wavelength and high output. In this type of laser, it is important to tightly control the ridge width in order to obtain the target lasing characteristics. In particular, in a semiconductor laser used as a high-output light source for CD-R or DVD-R, it is required to reduce t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/22H01S5/223H01S5/343
CPCH01S5/223H01S5/2214H01S5/22H01S5/34326B82Y20/00
Inventor 吉武春二寺田俊幸田中明
Owner KK TOSHIBA
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