Semiconductor device

Abstract

The present invention provides a semiconductor device which has a high maximum breaking current and hard to be broken. In the semiconductor device, a semiconductor chip 10 is pressue- welded to a part between a flat surface of a first main electrode member 30 and an upper surface 21a of a pillar 22 of a second main electrode member 20 via buffer plates 40, 50, and a gate electrode of the chip 10 is electrically connected with a gate signal wiring pattern of a circuit wiring board by using a gate connection conductor. One of a contact region between the pillar 22 of the second main electrode member 20 and the buffer plate 40 and a contact region between a part of the first main electrode member 30 facing the pillar 22 and the buffer plate 40 is formed small compared with a contact region between the buffer plate 40 on the second main electrode member 20 side and the semiconductor chip 10.

Description

technical field [0001] The present invention relates to a semiconductor device such as a power control semiconductor device, and more particularly to a semiconductor device capable of improving mechanical and electrical characteristics by optimizing the package structure of a bonding type device. Background technique [0002] It is known that semiconductor devices for general power control include IGBT (Insulated Gate Bipolar Transistor: Insulated Gate Bipolar Transistor) or IEGT (Injection Enhanced Gate Transistor: injection enhancement gate transistor). [0003] Compared with existing MOSFETs and bipolar transistors, these semiconductor devices for power control have the advantages of being able to withstand high voltages up to 6KV, and using MOS gates for voltage driving. In addition, they are characterized by low power loss, etc., and are widely used. [0004] Hereinafter, a conventional power control semiconductor device will be described in detail with reference to th...

AI Technical Summary

Problems solved by technology

If the magnification of the parasitic transistor increases, the parasitic thyristor composed of n source, P base, n base, and P emitter will easily become on state, and the current cannot be cut off by MOS gate.

In particular, if there is a part where the pressure is locally strong on the surface of the semiconductor chip, the parasitic thyristor is easily turned on in this part, and the current cannot be cut off by the MOS gate.

[0035] On the other hand, other parts use the MOS gate to cut off the current, so the current flowing into other parts is also concentrated on the part with high pressure, the operation of the thyristor expands, and the chip cannot be turned off from the on state, causing a self-locking (latch up) )Phenomenon

As a result, the problem is that the shutdown failure is caused, the maximum cut-off current is reduced, and the semiconductor chip is destroyed.

exist Figure 28 In the main circuit, the large current change rate di / dt in the main circuit generates a potential (electric power) in the gate circuit circuit, causing malfunction of the semiconductor chip and current concentration, gate voltage fluctuations, fluctuations in the main current Ic, etc.

In addition, the inductance of the gate circuit circuit is large, so it is also easily affected by the feedback from the collector current Ic to the gate, causing fluctuations in the gate voltage, etc., and even damage

[0039] Replacing the gate lead with a single-layer wiring sheet will also cause insufficient inductance drop, and the gate current Ig will flow to the emitter copper post 520 through which the main current Ic flows. Therefore, depending on the flow direction of the main current (current Time change of the vector) A potential is generated in the gate current path, a gate voltage different from the desired gate voltage of each chip is applied to the gate, current unevenness and current concentration occur, and the semiconductor chip is destroyed at a low current, etc. problem arises

[0040] As described above, the existing semiconductor devices for power control have problems of current concentration due to non-uniform surface pressure applied to the semiconductor chip, fluctuations in gate signal and collector current, etc., current concentration, etc., resulting in Causes the maximum cut-off current of the semiconductor chip to decrease and be damaged

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