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Proces for polishing indium phosphide single crystal wafer

A technology of indium single crystal and single wafer, applied in the field of polishing process of indium phosphide single wafer

Inactive Publication Date: 2003-03-12
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But because this patent has adopted chlorine-containing hypochlorite, so fundamentally speaking, still have the unfavorable foot and limitation mentioned above

Method used

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Embodiment 1

[0011] The mechanical polishing liquid is NALCO2360 colloidal silica suspension produced by U.S. Rodel Company, and the concentration is 300-700 g / liter, and the concentration used in this embodiment is 500 g / liter; in the chemical polishing liquid, the oxidizing agent is hydrogen peroxide, and this The invention selects some weak acids such as lactic acid (C 3 h 6 o 3 ), glacial acetic acid (CH 3 COOH), citric acid (C 6 h 8 o 7 ), boric acid (H 3 BO 3 ) or carbonic acid (H 2 CO 3 ) is an acidic pH regulator. Under the same premise of other polishing conditions, the polishing effect of the above-mentioned various weak acids as the acidic pH regulator of the chemical polishing solution is basically the same, and wherein the preferred lactic acid is the ideal polishing speed. In this regard, this embodiment only cites lactic acid as an example, and the rest of the above-mentioned weak acids will not be described in detail; the concentration of the chemical polishing sol...

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Abstract

A process for polishing the monocrystal chip of indium phosphide is characterized by that the polishing liquid prepared from hydrogen peroxide and acidic pH regulator chosen from C3H6O3, CH3COOH and C6H8O7 is used for polishing under 0.25-0.65 kg / sq.cm. Its advantage is excellent mirror surface.

Description

technical field [0001] The invention belongs to a semiconductor wafer processing technology, in particular to a polishing process of an indium phosphide single wafer. Background technique [0002] Indium phosphide (InP) crystal is an important compound semiconductor material. Compared with gallium arsenide (GaAs), its advantages mainly lie in high saturation electric field drift speed, good thermal conductivity and strong radiation resistance, so phosphorus Indium chloride wafers are commonly used in the manufacture of high-frequency, high-speed and high-power microwave devices and circuits. In the current rapidly developing field of optical fiber communication, indium phosphide wafer is also the preferred substrate material. [0003] Typical indium phosphide-based optoelectronic devices include: lasers, detectors, waveguide devices, and radiation-resistant solar cells; microelectronic devices include: high electron mobility transistors (HEMT), heterojunction bipolar transi...

Claims

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Application Information

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IPC IPC(8): B24B1/00C23F1/10H01L21/302
Inventor 董宏伟赵有文杨子祥焦景华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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