Cleaning liquor for diffusion, oxidation and epitaxial process

Abstract

The present invention is a cleaning solution used for pre-cleaning of processes such as diffusion, oxidation and epitaxy. The cleaning solution is based on the standard APM cleaning solution, using ozone instead of hydrogen peroxide, and adding tetramethyl ammonium hydroxide and complexing reagent CA to form a mixed solution. Using the cleaning solution, the effect of multi-step cleaning can be achieved with only one step of cleaning, the cleaning time is shortened, the product quality is improved, the consumption of reagents is saved, the waste treatment is reduced, and the production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit (IC) manufacturing technology, and in particular relates to a new single-step pre-cleaning solution for processes such as diffusion, oxidation and epitaxy. Background technique [0002] Since the invention of semiconductor transistors in the 1950s, especially the birth of silicon planar technology and epitaxy technology in the early 1960s, major breakthroughs have been made in the manufacturing process of semiconductor devices. Then the integrated circuit industry came into being. Since the advent of solid-state device technology, the importance of cleaning substrate surfaces in the fabrication of semiconductor microelectronic devices has been recognized. We all know that device performance, reliability and silicon circuit product yield are seriously affected by chemical reagent impurities and particle impurities remaining on the silicon wafer or device surface. Due to the extreme sen...

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Problems solved by technology

[0008] The use of SO cleaning has the following disadvantages: using a large amount of sulfuric acid and hydrogen peroxide, a large amount of hot water is required for repeated rinsing to remove various residues, however, experiments have proved that there are still "sulfur" residues on the surface

However, at present, there are very few choices of complexing reagents or surface active reagents suitable for the manufacture of silicon semiconductor integrated circuits.

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