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M-bit binary MAX phase material as well as preparation method and application thereof

A technology of reaction and molten salt method, applied in the field of materials, can solve the problems of MAX phase materials that have not been reported in the literature, and achieve the effect of enriching applications

Pending Publication Date: 2022-08-05
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, there are no literature reports on the MAX phase materials with M-site binary and A-site Sn

Method used

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  • M-bit binary MAX phase material as well as preparation method and application thereof
  • M-bit binary MAX phase material as well as preparation method and application thereof
  • M-bit binary MAX phase material as well as preparation method and application thereof

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preparation example Construction

[0036] Another aspect of the embodiments of the present invention provides a method for preparing an M-site binary MAX phase material, including, but not limited to, a molten salt method, a hot pressing method, a spark plasma sintering method, and the like.

[0037] In some embodiments, the preparation method specifically includes:

[0038] M and / or M-containing materials, M' and / or M'-containing materials, A and / or A-containing materials, X and / or X-containing materials, and inorganic salts are calculated as (0.01~3.99):(0.01~3.99): The molar ratio of 1:(1~3):(0~10) is mixed, and the obtained mixture is reacted in an inert atmosphere at a high temperature of 800 ℃~1700 ℃ under atmospheric pressure for 180~420min, and then post-processing to obtain an M-position binary The MAX phase material; the molecular formula of the M-bit binary MAX phase material is expressed as (M x ,M′ y ) n+1 AX n , 0<x<1, 0<y<1, x+y=1, where M and M' respectively include Ta, Sc, Hf, V, Nb, Mo, Zr...

Embodiment 1

[0051] Embodiment 1: In this embodiment, the M-bit binary MAX phase material is (Ti x V y ) 2 SnC bulk material.

[0052] The (Ti x V y ) 2 The preparation method of SnC block is as follows:

[0053] (1) Weigh TiC powder, V powder, Sn powder and carbon powder according to the ratio of 1:1:1:1, grind and mix the above materials to obtain a mixture.

[0054] (2) The mixture is placed in a graphite mold for spark plasma sintering. The reaction conditions are as follows: the reaction temperature is 1600° C., the holding time is 200 min, the pressure is 10 kN, and the inert atmosphere is protected. After the temperature dropped to room temperature, the reaction product in the graphite mold was taken out.

[0055] (3) polishing the reaction product to remove the surface impurity phase. After immersion in ethanol and ultrasonic cleaning, it was put into an oven at 50 ° C, and taken out after 12 hours to obtain a bulk product (Ti x V y ) 2 SnC.

[0056] The bulk product (...

Embodiment 2

[0057] Embodiment 2: In this embodiment, the M-bit binary MAX phase material is (V x Nb y ) 2 SnC powder material.

[0058] The (V x Nb y ) 2 The preparation method of SnC powder is as follows:

[0059] (1) Weigh VC powder, Nb powder, Sn powder and inorganic salt (NaCl+KCl) in a ratio of 1:1:1:1:10, grind and mix the above materials to obtain a mixture.

[0060] (2) The mixture is placed in a corundum crucible and placed in a high-temperature tube furnace for reaction. The reaction conditions were as follows: the reaction temperature was 1200° C., the holding time was 240 min, and the inert atmosphere was protected. After the temperature of the tube furnace was lowered to room temperature, the reaction product in the crucible was taken out.

[0061] (3) Wash the reaction product with deionized water and alcohol: put the reaction product into a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, and then let stand for 1 hour, and then discard the ...

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Abstract

The invention discloses an M-bit binary MAX phase material as well as a preparation method and application thereof. The molecular formula of the MAX phase material is represented as (Mx, M'y) n + 1AXn, 0lt; xlt; 1, 0lt; yt; Yt; x + y = 1, M and M'are respectively Ta, Sc, Hf, V, Nb, Mo, Zr, Cr, Ti, Mn or Y elements, M is different from M ', A is Sn, Al, Zn, Cu, Ge, Cd, Ga, In, Pb, S, Si or P elements, X is C and / or N elements, and n is 1, 2, 3 or 4. The preparation method is free of tedious processes and easy to implement, related elements of the components can be regulated and controlled according to requirements and application, members of the MAX phase material system are expanded, possibility is provided for obtaining more M-bit binary two-dimensional MXenes materials, and the MAX phase material has potential application prospects in the fields of ultrahigh temperature, biomedicine, energy and the like.

Description

technical field [0001] The invention relates to a composite inorganic material, in particular to an M-position binary MAX phase material, a preparation method and application thereof, and belongs to the technical field of materials. Background technique [0002] MAX phase materials are a class of nano-layered ternary compounds with the molecular formula M n+1 AX n , wherein M is the pre-transition metal element of III B, IV B, VB, VI B group, A is mainly IIIA and IVA group element, X is carbon and / or nitrogen, n=1~3. The crystal of MAX phase material has hexagonal symmetry, the space group is P63 / mmc, and its unit cell is composed of M n+1 X n Units and A atomic planes are alternately stacked. [0003] The solid solution of the M site of the MAX phase can make the MAX phase have a specific lattice distortion. For example, the addition of Nb and Sn can reduce the rhombic distortion of the lattice, while the addition of Sn increases the octahedral distortion. This feature...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/90
CPCC01B32/90C01P2002/72C01P2002/80C01P2002/70C01P2004/03
Inventor 黄庆张霄李友兵陈露
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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