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Growth method of p-type SiC with high doping uniformity

A growth method and uniformity technology, which is applied in the growth field of p-type SiC with high doping uniformity, can solve the problems of p-type SiC doping inhomogeneity, and achieve uniform resistivity, high quality and resistivity uniformity, The effect of maintaining crystal stability

Pending Publication Date: 2022-07-26
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, especially the problem of uneven doping of p-type SiC during the growth process, the present invention provides a growth method of p-type SiC with high doping uniformity

Method used

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  • Growth method of p-type SiC with high doping uniformity
  • Growth method of p-type SiC with high doping uniformity
  • Growth method of p-type SiC with high doping uniformity

Examples

Experimental program
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Effect test

Embodiment 1

[0034] A method for growing p-type SiC with high doping uniformity, the steps are as follows:

[0035] 1) Weigh 1500g of C powder and Si powder in a molar ratio of 1:1, and 2g of Al 4 C 3 Mix uniformly with Si powder and C powder for 2h to obtain a mixture;

[0036] 2) Put the mixture in a graphite crucible, heat it up to 1600°C, and keep it at 600mbar for 4h, the synthesis temperature is not easy to be too high to prevent Al 4 C 3 Premature gasification occurs to ensure that the Al element can be integrated into the SiC grains, and the SiC grains (Al-Si-C) containing the Al growth source are obtained;

[0037] The SEM images and EDS images of the prepared SiC grains (Al-Si-C) containing Al growth source are shown in figure 1 , figure 2 As shown, the Al element XPS pattern of the SiC grain containing the Al growth source is shown in image 3 As shown, XPS testing of Al element indicates the formation of Al-C bonds in the grains.

[0038] 3) Then the synthesized SiC cry...

Embodiment 2

[0044] A method for growing p-type SiC with high doping uniformity, the steps are as follows:

[0045] 1) Weigh 3000g of C powder and Si powder in a molar ratio of 1.4:1, and 60g of Al 2 O 3 Mix uniformly with Si powder and C powder for 1 h to obtain a mixture;

[0046] 2) Put the mixture in a graphite crucible, heat it up to 2000°C, and keep it at 900mbar for 8h. The synthesis temperature should not be too high to prevent Al 2 O 3 Premature gasification occurs to ensure that the Al element can be integrated into the SiC grains, and the SiC grains (Al-Si-C) containing the Al growth source are obtained;

[0047] 3) Then the synthesized SiC crystal grains (Al-Si-C) containing the Al growth source are taken out.

[0048] 4) Load the SiC grains (Al-Si-C) containing the Al growth source into the growth crucible, without adding Al dopant into the powder;

[0049] 5) Put the loaded crucible into the growth chamber of the PVT single crystal furnace to grow p-type crystals; obtain...

Embodiment 3

[0051] A method for growing p-type SiC with high doping uniformity, the steps are as follows:

[0052] 1) Weigh 1500g of C powder and Si powder in a molar ratio of 1:1, and 3g of Al 4 C 3 Mix uniformly with Si powder and C powder for 3h to obtain a mixture;

[0053] 2) Put the mixture in a graphite crucible, heat it up to 2100 ° C, and keep it at 1 mbar for 60 hours. The synthesis temperature should not prevent Al 4 C 3 Premature gasification occurs to ensure that the Al element can be integrated into the SiC grains to obtain SiC polycrystalline ingots containing Al growth sources (Al-Si-C); SiC polycrystalline ingots containing Al growth sources such as Image 6 shown.

[0054] 3) Then the synthesized SiC polycrystalline ingot (Al-Si-C) containing the Al growth source is taken out.

[0055] 4) The SiC polycrystalline block (Al-Si-C) containing the Al growth source is loaded into the growth crucible, and there is no need to add Al dopant into the powder;

[0056] 5) Put ...

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Abstract

The invention relates to a method for growing p-type SiC with high doping uniformity, which comprises the following steps of: firstly, preparing SiC crystal grains or SiC polycrystalline blocks containing doping elements, realizing uniform and continuous release of the doping elements through a method of locking the doping elements by the SiC crystal grains or polycrystalline blocks, and sealing the SiC crystal grains or polycrystalline blocks containing the doping elements as a growth source to prepare p-type SiC with high doping uniformity. The doping uniformity of the doping elements in the axial direction and the radial direction of the crystal ingot can be greatly improved, p-type SiC is obtained, the doping nonuniformity of the doping elements in the growth process is relieved, and the crystal quality is improved.

Description

technical field [0001] The invention relates to a method for growing p-type SiC with high doping uniformity, and belongs to the technical field of semiconductors. Background technique [0002] As a third-generation semiconductor material, silicon carbide has excellent semiconductor properties such as large band gap, high saturation electron velocity, high critical breakdown electric field, and high thermal conductivity. It is very suitable for the preparation of high-temperature, high-frequency, high-power semiconductor devices. Silicon carbide devices have important applications in aviation, aerospace exploration, power grid transmission, 5G communications, new energy vehicles and other fields. IGBT (Insulated-Gate-Bipolar-Transistor) or insulated gate bipolar transistor is a compound semiconductor composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor). IGBT has the advantages of both MOS and BJT, and its conduction principle is similar to th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 陈秀芳仲光磊谢雪健彭燕杨祥龙胡小波徐现刚
Owner SHANDONG UNIV
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