Self-biased high-adaptability crystal oscillation integrated circuit
A crystal oscillation and integrated circuit technology, applied in power oscillators, electrical components, etc., can solve the problems of reduced phase margin of oscillators, unfavorable oscillators, and no current power consumption control system, and achieve the effect of avoiding current consumption
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Embodiment 1
[0068] like Figure 7 shown in Figure 4 On the basis of the shown embodiment, a two-stage differential comparator circuit is added. The specific circuit structure is:
[0069] One end of the crystal oscillator X is connected to one end of the second resistor R2 and the gate of the sixth MOS transistor M6, and the other end of the second resistor R2 is connected to the third capacitor C3, the gate of the second MOS transistor M2, and the gate of the fifth MOS transistor M5. The gate is connected, the source of the fifth MOS transistor M5 and the source of the sixth MOS transistor M6 are connected to the drain of the tenth MOS transistor M10, and the drain of the fifth MOS transistor M5 is connected to the drain of the seventh MOS transistor M7 , the gate of the seventh MOS transistor M7 and the gate of the eighth MOS transistor M8 are connected, the drain of the eighth MOS transistor M8 is connected to the drain of the sixth MOS transistor M6 and the gate of the ninth MOS tr...
Embodiment 2
[0075] like Figure 8 As shown, this embodiment uses a PMOS transistor as the input MOS pair of transistors, which is the same as the Figure 7 The circuit shown is only different in the second-level differential comparator circuit. The specific circuit structure of this part is:
[0076] One end of the crystal oscillator X is connected to one end of the second resistor R2 and the gate of the fifth MOS transistor M5, and the other end of the second resistor R2 is connected to the third capacitor C3, the gate of the second MOS transistor M2, and the gate of the sixth MOS transistor M6. gate connection,
[0077]The source of the fifth MOS transistor M5 and the source of the sixth MOS transistor M6 are both connected to the drain of the tenth MOS transistor M10, and the drain of the fifth MOS transistor M5 is connected to the drain of the seventh MOS transistor M7 and the seventh MOS transistor M10. The gate of the transistor M7 and the gate of the eighth MOS transistor M8 are ...
Embodiment 3
[0083] like Figure 9 As shown, this embodiment uses a PMOS tube as the input pair tube and current mirror of the self-biased current source circuit, which is the same as the Figure 7 The circuit shown differs only in the crystal oscillator circuit and the self-biased current source circuit. The specific circuit structure of this part is:
[0084] One end of the crystal oscillator X is connected to the drain of the first MOS transistor M1, the drain of the fourth MOS transistor, and one end of the first capacitor C1, and the other end of the crystal oscillator X is connected to one end of the second capacitor C2, one end of the second resistor R2, The gate of the first MOS transistor M1 and the gate of the sixth MOS transistor M6 are connected, two ends of the nonlinear MOS transistor are respectively connected to two ends of the crystal oscillator X, and the other end of the second resistor R2 is connected to one end of the third capacitor C3, The gate of the second MOS tr...
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