Perovskite photoactive material, preparation method thereof and solar cell device
A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency, low carrier mobility, poor battery repetition performance, etc., to improve carrier mobility and filling factor, repetition rate Good performance and improved photoelectric conversion efficiency
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Embodiment 1
[0101] This embodiment provides a perovskite photoactive material, and the precursor of the perovskite photoactive material includes 8.6 parts by weight of amylamine iodide, 41.5 parts of lead iodide and 11.1 parts of iodomethylamine.
[0102] This embodiment provides a solar cell device, and the structure diagram of the solar cell device is as follows: figure 1As shown, it includes a first electrode 1 (indium tin oxide transparent conductive glass, with a thickness of 5 mm), a hole transport layer 2 (poly[bis(4-phenyl) (2,4,6-trimethylbenzene) base) amine] layer with a thickness of 25 nm), a perovskite photoactive layer 3 (with a thickness of 320 nm), an electron transport layer 4 (with a thickness of 28 nm) and a second electrode 5 (silver layer with a thickness of 80 nm); the electrons The transport layer includes a fullerene layer with a thickness of 20 nm and a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline layer with a thickness of 8 nm; the fullerene layer is close to th...
Embodiment 2
[0108] This embodiment provides a perovskite photoactive material, and the precursor of the perovskite photoactive material includes 17.2 parts by weight of amylamine iodide, 83 parts of lead iodide and 22.2 parts of iodomethylamine.
[0109] This embodiment provides a solar cell device, which includes a first electrode (indium tin oxide transparent conductive glass, with a thickness of 5 mm), a hole transport layer (poly[bis(4-phenyl) ( 2,4,6-trimethylphenyl)amine] layer with a thickness of 25 nm), a perovskite photoactive layer (with a thickness of 320 nm), an electron transport layer (with a thickness of 28 nm) and a second electrode (silver layer with a thickness of 28 nm) 80nm); the electron transport layer includes a fullerene layer with a thickness of 20nm and a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline layer with a thickness of 8nm; The lerene layer is close to the perovskite photoactive layer.
[0110] This embodiment provides a method for preparing the solar cel...
Embodiment 3
[0112] This embodiment provides a perovskite photoactive material, and the precursor of the perovskite photoactive material includes 8.6 parts by weight of amylamine iodide, 41.5 parts of lead iodide and 11.1 parts of iodomethylamine.
[0113] This embodiment provides a solar cell device, which is different from Embodiment 1 only in that the material of the second electrode is gold, and other structures, components and dosages are the same as those of Embodiment 1.
[0114] This embodiment provides a method for preparing the solar cell device, which differs from Embodiment 1 only in that in step (3), metal gold is evaporated on the surface of the electron transport layer, and other steps and parameters are the same as those in Embodiment 1 .
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