Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of miniature thermoelectric device

A technology of thermoelectric devices and manufacturing methods, which is applied to the manufacture/processing of thermoelectric devices, parts of thermoelectric devices, materials for lead-out wires of thermoelectric devices, etc., which can solve the problem of low performance and reliability of generators, complex structure of generators, Problems such as high production cost, to achieve the effect of establishing temperature difference, high success rate, and simple process

Pending Publication Date: 2022-06-28
SHAOXING UNIVERSITY
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, when the heat source is non-flat, this traditional π-shaped thermoelectric device is no longer applicable.
For example, automobile exhaust exhaust pipes, such as using π-shaped thermoelectric power generation modules to manufacture thermoelectric power generation devices that match the heat source (such as US Patent No. Good contact between heat sources, so that the structure of the generator becomes very complicated, the production cost is high, and the performance and reliability of the generator are low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of miniature thermoelectric device
  • Manufacturing method of miniature thermoelectric device
  • Manufacturing method of miniature thermoelectric device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0058] Example: For a heat source with a planar structure such as a computer CPU, a mobile phone CPU, etc., the structure and performance of the thermoelectric device were simulated by using ComsolMultiphysics finite element simulation, and the structure and manufacturing method of the above-mentioned thermoelectric device were used to prepare such as Figure 1-Figure 3 In the micro thermoelectric device shown, the bottom ceramic plate 1 of the micro thermoelectric device is flat and can be attached to the surface of the heat source, and the top ceramic plate 2 can be connected to other passive cooling devices such as cooling fans or condensed water to maintain the constant temperature of the cold end. When the CPU is working, the micro thermoelectric device is energized, and the micro thermoelectric device draws heat from the CPU chip to the heat sink on the top ceramic plate 2 in a reverse temperature gradient manner, that is, to achieve active cooling of the CPU chip.

[005...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a manufacturing method of a miniature thermoelectric device and belongs to the technical field of semiconductor devices. According to the invention, a thermoelectric film mask and an electrode layer mask are fixed on a monolithic substrate, and a thermoelectric film and an electrode layer are prepared on the monolithic substrate by using a molecular beam epitaxial growth technology and an electron beam evaporation coating technology respectively; welding coatings are prepared at the bottom end of the top ceramic plate and the top end of the bottom ceramic plate through the mask deposition technology; stacking a plurality of single substrates on the bottom ceramic plate in parallel, and welding the single substrates on the bottom ceramic plate through a welding coating; and covering the top ceramic plate, and welding the top ceramic plate and the monolithic substrate together through the welding coating, thereby completing the manufacturing of the micro thermoelectric device. The in-plane structure of the miniature thermoelectric device is adopted to manufacture the monolithic substrate, and compared with a pi-type structure of a traditional thermoelectric device, the miniature thermoelectric device has the advantages of being long in thermoelectric arm, beneficial to temperature difference establishment, miniaturized and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a manufacturing method of a micro thermoelectric device. Background technique [0002] Among many new energy technologies, thermoelectric conversion technology has attracted much attention because it can directly utilize various waste heat in daily production to generate electricity. At the same time, the new generation of intelligent and flexible micro-nano electronic systems represented by wearable and implantable devices urgently need to develop micro-watt-milliwatt-level self-powering technology, which can be combined with primary and secondary battery technology to improve the stability of device operation. and service life. Thermoelectric materials, because they can generate electricity by utilizing the temperature difference between human body temperature and the surrounding environment, have become an effective solution for the self-powering tec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L35/34H01L35/14H01L35/28H01L35/02H10N10/01H10N10/10H10N10/80H10N10/851
CPCH10N10/851H10N10/80H10N10/10H10N10/01
Inventor 吴佳隆俞书昕吴青书陈佳明陈容严正博吴浩南陈贵玲金泽辛
Owner SHAOXING UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products