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Device for preparing high-length-consistency semiconductor laser wafer natural cleavage surface and use method thereof

A technology of natural cleavage and consistency, applied in the field of devices for preparing natural cleavage surfaces of semiconductor laser wafers with high length consistency, can solve the problems of expensive equipment, low efficiency, inconsistent length of natural cleavage surfaces, etc., and achieve consistent length Good performance, easy cleavage, time- and cost-saving effects

Pending Publication Date: 2022-06-03
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] If the manual process is used, the diamond knife will not be able to accurately position the position of the knife, resulting in inconsistent lengths of the natural cleavage planes in a batch of wafers, which will adversely affect the subsequent process. Loomis and other cleavage equipment are used. , the efficiency is low and the equipment is expensive

Method used

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  • Device for preparing high-length-consistency semiconductor laser wafer natural cleavage surface and use method thereof
  • Device for preparing high-length-consistency semiconductor laser wafer natural cleavage surface and use method thereof
  • Device for preparing high-length-consistency semiconductor laser wafer natural cleavage surface and use method thereof

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Embodiment 1

[0051] A device for preparing the natural cleavage surface of a semiconductor laser wafer with high length consistency, such as figure 1 , figure 2 and image 3 As shown, including the photolithography mask 4 and the vacuum fixing base 14,

[0052] The surface of the photolithography mask 4 is provided with a groove, and the groove is used to limit the wafer 8. The shape of the groove is the same as that of the wafer 8. The shape of the groove includes a limit flat edge 3 and a The limit flat edge 3 is an arc edge connected end to end, the limit flat edge 3 is used to limit the cutting surface 10 of the wafer, and the arc edge is used to limit the circumference of the wafer 8; the groove includes a light-transmitting area 1 and opaque area 2, the transparent area 1 is set at the edge of the groove, and the transparent area 1 is parallel to the limit flat edge 3, the transparent area 1 is used to form the transparent area 1 on the wafer 8 deep groove structures 12 with the ...

Embodiment 2

[0064] Based on the method for preparing the device for the natural cleavage surface of a semiconductor laser wafer with high length consistency provided in Embodiment 1, the method includes:

[0065] (1) Coating photoresist on the backside of the wafer 8; in step (1), the photoresist is a positive photoresist.

[0066] (2) After pre-baking, the wafer 8 is placed in the groove of the photolithography mask 4, the side coated with photoresist on the wafer 8 is in contact with the groove, and the cut surface 10 of the wafer is in contact with the groove. The limit flat edge 3 is in contact, and the circumference of the wafer 8 is in contact with the arc edge of the groove; the wafer 8 is limited by the groove to ensure that the exposure position remains consistent;

[0067] (3) Expose and develop the wafer 8; the processed wafer 8 is as follows Figure 4 As shown, one side of the wafer has a chamfer 9 of the wafer. In step (3), the photolithography mask 4 is irradiated and expo...

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Abstract

The invention relates to a device for preparing a natural cleavage surface of a high-length-consistency semiconductor laser wafer and a use method of the device, the device provides a novel photoetching mask and a vacuum fixed base, the wafer is exposed on the photoetching mask after being glued, then developing and etching are carried out, a deep groove structure is prepared on the wafer, and the high-length-consistency natural cleavage surface of the high-length-consistency semiconductor laser wafer is obtained. Fixing the wafer on a vacuum fixing base, and enabling the deep groove structure on the wafer to be suspended; and applying pressure from the right side of the deep groove structure of the wafer by adopting a cutter, so that the wafer is naturally broken, and a natural cleavage surface of the wafer is obtained. The length of the natural cleavage surface of the wafer prepared by the device provided by the invention has high consistency.

Description

technical field [0001] The invention relates to a device for preparing a natural cleavage surface of a semiconductor laser wafer with high length consistency and a method for using the same, belonging to the technical field of preparation of the natural cleavage surface of a semiconductor laser wafer. Background technique [0002] A semiconductor laser is a semiconductor chip that uses a certain semiconductor material as a working substance and generates laser light. Generally, gallium arsenide, gallium nitride and indium phosphide semiconductor material systems are used. Like other lasers, the following three conditions must be met to generate laser light: (1) working substance; (2) the existence of an F-P optical resonant cavity that makes the light energy oscillate back and forth and feedback; (3) continuous energy injection. Among them, the working material of the semiconductor laser is mainly the quantum well active region where the carrier inversion distribution occurs...

Claims

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Application Information

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IPC IPC(8): H01S5/02
CPCH01S5/0202H01S2304/00Y02P70/50
Inventor 孙春明苏建郑兆河徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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