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Modification method of full-suede perovskite/crystalline silicon laminated solar cell

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of poor repeatability of the perovskite polycrystalline film process, inability to form intermediate complexes, and uncontrollable crystallization process of the perovskite polycrystalline film. The effect of low difficulty in operation process and simple method

Pending Publication Date: 2022-06-03
NANCHANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is mainly attributed to the first step of vacuum physical vapor deposition of inorganic compound films, which cannot form intermediate complexes in the liquid phase method, resulting in an uncontrollable crystallization process of the top-cell perovskite polycrystalline film
Therefore, the process repeatability of the perovskite polycrystalline film prepared by the vacuum-assisted two-step method is poor, resulting in the final performance of the all-textured perovskite / crystalline silicon tandem solar cell far below the theoretical value, and there is still a great improvement space

Method used

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  • Modification method of full-suede perovskite/crystalline silicon laminated solar cell
  • Modification method of full-suede perovskite/crystalline silicon laminated solar cell
  • Modification method of full-suede perovskite/crystalline silicon laminated solar cell

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Embodiment 1

[0031] An embodiment of a method for simultaneously improving the open circuit voltage and stability of a full-textured perovskite / crystalline silicon tandem solar cell, comprising the following steps:

[0032] (1) Select a commercial double-sided textured heterocrystalline silicon cell with no indium tin oxide transparent electrode deposited on the n-type amorphous silicon surface, and use it as the bottom cell of the tandem solar cell. 15nm nanocrystalline silicon was deposited on the crystalline silicon by plasma enhanced chemical vapor deposition equipment as a tunneling composite layer.

[0033] (2) A hole transport layer spiro-TTB with a thickness of 25 nm was deposited on the nanocrystalline silicon as the tunneling composite layer at an evaporation rate of 0.02 nanometers per second in a thermal evaporation vacuum deposition equipment; The first step of preparing the perovskite light absorbing layer by the step method: co-evaporating lead iodide and cesium bromide usin...

Embodiment 2

[0047] An embodiment of a method for simultaneously improving the open circuit voltage and stability of a full-textured perovskite / crystalline silicon tandem solar cell, comprising the following steps:

[0048] (1) Select a commercial double-sided textured heterocrystalline silicon cell with no indium tin oxide transparent electrode deposited on the n-type amorphous silicon surface, and use it as the bottom cell of the tandem solar cell. 15nm nanocrystalline silicon was deposited on the crystalline silicon by plasma enhanced chemical vapor deposition equipment as a tunneling composite layer.

[0049] (2) A hole transport layer spiro-TTB with a thickness of 25 nm was deposited on the nanocrystalline silicon as the tunneling composite layer at an evaporation rate of 0.02 nanometers per second in a thermal evaporation vacuum deposition equipment; The first step of preparing the perovskite light absorbing layer by step method: co-evaporating lead iodide and cesium bromide using th...

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Abstract

The invention discloses a modification method of a full-suede perovskite / crystalline silicon laminated solar cell, which is characterized in that annealing is carried out twice aiming at a vacuum-assisted two-step method, and an inorganic compound film subjected to vacuum physical deposition in the first step is subjected to steam annealing treatment through a mixed solvent consisting of a good solvent and a poor solvent. The good solvent can react with lead ions in the inorganic compound film to form an intermediate complex, so that the crystallization of the perovskite polycrystalline film during the second thermal annealing is delayed, and the crystallization quality of the perovskite polycrystalline film is improved; in addition, it is ensured that the inorganic compound layer coats the textured surface of the whole crystalline silicon bottom cell in the first step, so that the excellent performance of the final all-textured perovskite / crystalline silicon laminated solar cell is ensured, and the modification method is expected to promote the industrialization process of the all-textured perovskite / crystalline silicon laminated solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a modification method of a full-textured perovskite / crystalline silicon laminated solar cell, which can greatly improve the repeatability of the preparation process of the perovskite top cell. Background technique [0002] Organic-inorganic metal halide perovskite solar cells (PSCs) have attracted considerable interest in the past decade, and the photoelectric conversion efficiency (PCE) of single-junction perovskite solar cells now exceeds 25%. Its adjustable band gap and low fabrication cost make it very suitable for use with crystalline silicon cells to prepare high-efficiency perovskite / crystalline silicon tandem solar cells. In the perovskite / crystalline silicon stack structure, high-energy photons are absorbed in the perovskite top cell, and low-energy photons are absorbed in the crystalline silicon bottom cell. The reasonable combination of the two material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48H01L51/46H01L31/0236H01L31/0687
CPCH01L31/02363H01L31/0687H10K71/40H10K85/30H10K30/00Y02E10/544
Inventor 姚凯张芙熊志俊
Owner NANCHANG UNIV
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