Lateral double diffused field effect transistor, manufacturing method, chip and circuit

Abstract

The invention provides a lateral double-diffused field effect transistor, a manufacturing method, a chip and a circuit. The transistor includes: a substrate with a high-voltage N-type well; a first N-type drift region, a P-type body region and a second The N-type drift region is formed in the high-voltage N-type well; the first strained region is formed in the first N-type drift region; the second strained region is formed in the second N-type drift region; the first drain is formed in the second N-type drift region. One strain region; the second drain, formed in the second strain region; the first source and the second source, formed in the P-type body region; the substrate electrode, formed in the first source and the second source between; the first gate, formed on the upper surface of the first N-type drift region and the P-type body region; the second gate, formed on the upper surface of the P-type body region and the second N-type drift region, and the second gate A space is formed between the electrode and the first grid. The transistor provided by the invention can improve the mobility of carriers in the channel, and improve the driving ability and speed of the transistor.

Description

Lateral double diffusion field effect transistor, fabrication method, chip and circuit technical field The present invention relates to semiconductor technology field, particularly, relate to a kind of lateral double diffusion field effect transistor fabrication method Method, a lateral double diffusion field effect transistor, a chip and a circuit. Background technique Lateral Double Diffused Field Effect Transistor (Lateral Double-Diffused MOSFET, LDMOS) is used as a kind of Lateral power devices, whose electrodes are all located on the surface of the device, are easily connected to low-voltage signal circuits and other The monolithic integration of the device also has the advantages of high withstand voltage, large gain, good linearity, high efficiency, and good broadband matching performance. Nowadays, it has been widely used in power integrated circuits, especially low-power and high-frequency circuits. In the prior art, the lateral double diffusion field effe...

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Problems solved by technology

[0004] Aiming at the technical problem of poor driving capability and speed of lateral double diffused field effect transistors in the prior art, the present invention provides a method for manufacturing a lateral double diffused field effect transistor, a lateral double diffused field effect transistor, a chip and a A kind of circuit, the lateral double-diffusion field effect transistor prepared by this method can improve the mobility of carriers in the channel, and improve the driving ability and speed of the transistor

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