Programmable ultra-narrow power pulse sharpening circuit and method

A power pulse, sharpening circuit technology, applied in pulse shaping and other directions, to achieve the effect of improving applicability, improving overall processing efficiency, and reducing parasitic inductance

Active Publication Date: 2022-03-29
SOUTHWEAT UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the problems of electric discharge machining in the prior art, and provide a programmable ultra-narrow power pulse sharpening circuit and method in order to improve the processing quality and overall processing efficiency of gas film holes

Method used

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  • Programmable ultra-narrow power pulse sharpening circuit and method
  • Programmable ultra-narrow power pulse sharpening circuit and method
  • Programmable ultra-narrow power pulse sharpening circuit and method

Examples

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Effect test

Embodiment 1

[0057] In an exemplary embodiment, a programmable ultra-narrow power pulse sharpening circuit is provided, and the sharpening circuit includes a DC power supply, a first capacitor C1, a first half-bridge circuit, a second half-bridge circuit and Load, the first half-bridge circuit and the second half-bridge circuit are cascaded to output ultra-narrow power pulses; the duty cycle dead zones of the first half-bridge circuit and the second half-bridge circuit are the same;

[0058] The first half-bridge circuit includes at least a pair of transistors with complementary control signals, and the second half-bridge circuit includes at least a pair of transistors with complementary control signals; the control signal of the second half-bridge circuit is higher than that of the first half-bridge circuit. The control signal of the bridge circuit is delayed so that the sharpening circuit discharges quickly.

[0059] Specifically, by cascading the first half-bridge circuit and the second...

Embodiment 2

[0067] Based on Embodiment 1, a programmable ultra-narrow power pulse sharpening circuit is provided, such as figure 1 As shown, the first half-bridge circuit includes a first transistor Q1 and a second transistor Q2, and the second half-bridge circuit includes a third transistor Q3 and a fourth transistor Q4, and RL in the figure represents a load.

[0068] One end of the first capacitor C1 is connected to the positive pole of the direct current power supply, the other end of the first capacitor C1 is connected to the negative pole of the direct current power supply DC, and the drain of the first transistor Q1 is connected to the first On the common connection point between a capacitor C1 and the positive pole of the direct current power supply DC, the source of the first transistor Q1 is connected to the drain of the second transistor Q2, and the source of the second transistor Q2 is connected to the On the common connection point of the first capacitor C1 and the DC negativ...

Embodiment 3

[0082] Gallium nitride (GaN) has been regarded as a next-generation semiconductor material for power electronic devices with high efficiency and high power density. Compared with silicon Si materials, the high-frequency switching characteristics of GaN power devices allow them to be used as small on-board passive components, thereby reducing parasitic losses and costs. Although discrete GaN power devices have demonstrated excellent characteristics, most peripheral control / drive modules are composed of these discrete GaN devices using Si technology. In order to verify the rationality of the theoretical scheme design, the simulation circuit model built by the spice simulation model of GaN devices using LTspice simulation software is as follows: Figure 8 shown.

[0083] Wherein, assume that the load is a pure resistive load 50Ω to verify the width of the pulse output of the circuit of the present invention, as Figure 9 As shown, the gate-source control signals of four switchi...

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Abstract

The invention discloses a programmable ultra-narrow power pulse sharpening circuit and method, and belongs to the technical field of power semiconductors, the sharpening circuit comprises a direct current power supply, a first capacitor C1, a first half-bridge circuit, a second half-bridge circuit and a load which are connected in sequence, and the first half-bridge circuit and the second half-bridge circuit are cascaded to output ultra-narrow power pulses; the first half-bridge circuit at least comprises a pair of transistors with complementary control signals, and the second half-bridge circuit at least comprises a pair of transistors with complementary control signals; and the control signal of the second half-bridge circuit is delayed compared with the control signal of the first half-bridge circuit, so that the sharpening circuit is rapidly discharged. According to the method disclosed by the invention, the melting rate when the material is etched and removed by discharge is reduced by a method of controlling the discharge pulse with the pulse width of nanosecond and extremely high peak power, and the vaporization rate is greatly improved, so that the surface defects of the gas film hole are reduced, and the positive promotion effect on the improvement of the manufacturing capacity of the gas film hole of the turbine blade in China is achieved.

Description

technical field [0001] The invention relates to the technical field of power semiconductors, in particular to a programmable ultra-narrow power pulse sharpening circuit and method. Background technique [0002] Power semiconductor devices, formerly known as power electronic devices, are semiconductor devices that perform power processing and have the ability to handle high voltage and high current. Including frequency conversion, voltage conversion, current conversion, power management and so on. Early power semiconductor devices include high-power diodes and thyristors, etc., and later power semiconductor devices are mainly new power semiconductor devices represented by MOSFETs, such as VDMOS, LDMOS, and IGBT. [0003] With the development of power semiconductor technology, with the advantages of small size, strong controllability, long life and high reliability, it has gradually replaced the gas switch and has become the leading switch in the pulse power source. The full ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K5/01
CPCH03K5/01
Inventor 朱玉玉黄建利朱玉颖康玉宽
Owner SOUTHWEAT UNIV OF SCI & TECH
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