Mg-doped enhanced transition metal sulfide-based visible light detector and preparation method thereof

A technology of transition metals and sulfides, applied in sustainable manufacturing/processing, semiconductor devices, climate sustainability, etc., can solve problems such as the difficulty of forming a strong heterojunction built-in electric field, so as to improve device performance and reduce dark Current, the effect of improving the response speed

Pending Publication Date: 2022-03-25
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Existing transition metal sulfides exhibit natural n-type electronic characteristics, and it is difficult to form a strong heterojunction built-in electric field with traditional III-V materials
Because S vacancies are difficult to eliminate, this n-type electronic characteristic is difficult to change through preparation process regulation
Therefore, p-type doping of transition metal sulfides is a difficult problem

Method used

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  • Mg-doped enhanced transition metal sulfide-based visible light detector and preparation method thereof
  • Mg-doped enhanced transition metal sulfide-based visible light detector and preparation method thereof
  • Mg-doped enhanced transition metal sulfide-based visible light detector and preparation method thereof

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Embodiment 1

[0047] This embodiment provides a Mg-doped enhanced transition metal dichalcogenide (TMDs) based visible light detector, comprising a Si substrate layer, an InGaN layer, a Mg-doped TMDs layer, a Ti electrode layer and a gold electrode layer from bottom to top .

[0048] This embodiment also provides a method for preparing a Mg-doped enhanced transition metal dichalcogenide (TMDs)-based visible light detector, comprising the following steps:

[0049] 1) Spin-coat photoresist on the Si-based InGaN epitaxial wafer, and photoetch the Mg layer evaporation area device (the Mg evaporation area is located at one end of the upper surface of the InGaN epitaxial wafer, partially covering InGaN);

[0050] 2) Evaporating a layer of metal Mg with molecular beam evaporation equipment on the evaporation area of ​​step 1), the thickness of the metal Mg is 10nm, to obtain an epitaxial wafer device containing a metal Mg layer;

[0051] 3) stripping and cleaning the unexposed photoresist of the ...

Embodiment 2

[0060] This embodiment provides a Mg-doped enhanced transition metal dichalcogenide (TMDs) based visible light detector, comprising a Si substrate layer, an InGaN layer, a Mg-doped TMDs layer, a Ti electrode layer and a gold electrode layer from bottom to top .

[0061] This embodiment also provides a method for preparing a Mg-doped enhanced transition metal dichalcogenide (TMDs)-based visible light detector, comprising the following steps:

[0062] 1) Spin-coat photoresist on the Si-based InGaN epitaxial wafer, and photoetch the evaporation area of ​​the Mg layer; the evaporation area is located at one end of the upper surface of the InGaN layer;

[0063] 2) Evaporating a layer of metal Mg with molecular beam evaporation equipment on the evaporation area of ​​step 1), the thickness of the metal Mg is 20nm, to obtain an epitaxial wafer device containing a metal Mg layer;

[0064] 3) stripping and cleaning the unexposed photoresist of the device containing the metal Mg layer d...

Embodiment 3

[0071] This embodiment provides a Mg-doped enhanced transition metal dichalcogenide (TMDs)-based visible light detector, including a Si substrate layer, an InGaN layer, and a Mg-doped MoS layer from bottom to top. 2 layer, Ti electrode layer and Au electrode layer.

[0072] This embodiment also provides a method for preparing a Mg-doped enhanced transition metal dichalcogenide (TMDs)-based visible light detector, comprising the following steps:

[0073] 1) Spin-coat photoresist on the Si-based InGaN epitaxial wafer, and photoetch the Mg layer evaporation area device;

[0074] 2) Evaporating a layer of metal Mg with molecular beam evaporation equipment for the device in step 1), the thickness of the metal Mg is 50nm, to obtain an epitaxial wafer device containing a metal Mg layer;

[0075] 3) stripping and cleaning the unexposed photoresist of the device containing the metal Mg layer described in step 2) to obtain the stripped Mg layer device;

[0076] 4) For the Mg layer dev...

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Abstract

The invention belongs to the technical field of visible light detectors, and discloses an Mg-doped enhanced transition metal sulfide-based visible light detector and a preparation method thereof. The visible light detector comprises a Si substrate layer, an InGaN layer, a Mg-doped transition metal sulfide layer and an electrode layer which are sequentially arranged from bottom to top. And the Mg-doped transition metal sulfide layer partially covers the InGaN layer. The invention further discloses a preparation method of the visible light detector. The Mg metal layer is partially deposited on the surface of InGaN, the Mg-doped TMDs layer is prepared through chemical vapor deposition, a large number of acceptor energy levels are introduced, p-type doping of TMDs is achieved, and the carrier concentration is regulated and controlled. The regulated carrier optimizes the barrier height between the material and the electrode, reduces dark current, enhances the rectification ratio, improves the response speed of the device, and has important significance for realizing a high-performance and high-sensitivity photoelectric detector for visible light communication.

Description

technical field [0001] The invention belongs to the field of photodetectors for visible light communication, and in particular relates to a Mg-doped enhanced transition metal sulfide (TMDs)-based visible light detector and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of solid-state lighting, visible light communication technology has also made great progress. Visible light communication is a wireless optical communication technology based on white light-emitting diode technology, which can realize two functions of lighting and high-speed data transmission at the same time, and has the characteristics of high signal density coverage, high confidentiality and security, anti-electromagnetic interference, and wide spectrum range. It can realize high-speed, stable and safe communication transmission. As an unrestricted blank spectrum area, there is no interference with traditional radio waves in the signal, opening up th...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/109H01L31/18
CPCH01L31/109H01L31/18H01L31/0321Y02P70/50
Inventor 李国强曹犇郑昱林唐鑫
Owner SOUTH CHINA UNIV OF TECH
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