Preparation method of one-dimensional single crystal germanium-based graphene plasmon nanostructure

A technology of plasmonic and nanostructures, which is applied in the field of preparation of plasmonic nanostructures, can solve problems such as the inability to study the surface plasmon effect, complexity, and poor quality of graphene, so as to avoid the transfer of graphene films process, strong plasmon effect, effect of avoiding oxidation

Active Publication Date: 2022-01-28
HENAN UNIVERSITY
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, both chemical vapor deposition and epitaxial growth methods can obtain high-quality graphene films, but most of them are grown on germanium single crystal films, which are not compatible with silicon-based device technology; although powdered graphene prepared by redox method Lower requirements for the substrate, but lower quality graphene
Patent CN110875470A discloses an amorphous germanium-based nanowire-graphene nanocomposite lithium-ion battery negative electrode material and its preparation method. The method uses reduced graphene oxide and amorphous germanium wire for ultrasonic dispersion and then suction filtration and vacuum drying to obtain the sample. The whole experiment period is long and complicated, and it is easy to introduce other pollutants, and the crystallinity and cleanliness of the reduced graphene oxide cannot be compared with the high-quality graphene prepared by chemical vapor deposition, so it cannot be used to evaluate the quality of the sample. Highly demanding surface plasmon effect research

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of one-dimensional single crystal germanium-based graphene plasmon nanostructure
  • Preparation method of one-dimensional single crystal germanium-based graphene plasmon nanostructure
  • Preparation method of one-dimensional single crystal germanium-based graphene plasmon nanostructure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A method for preparing a one-dimensional single-crystal germanium-based graphene plasmonic nanostructure, specifically as follows:

[0040] Step 1: Cut the silicon wafer into the desired size, put it into a beaker, and use acetone solution to sonicate for 15 minutes, then put it in isopropanol solution and sonicate for 15 minutes, and finally rinse with ethanol and blow dry with a nitrogen gun for later use;

[0041] Step 2: Put the gold target and the cleaned silicon wafer into the magnetron sputtering instrument respectively, turn on the switch of the molecular pump, and let the working gas 20sccm Ar, wait until the vacuum degree of the sputtering chamber reaches 7 × 10 -4 pa, select the radio frequency mode of magnetron sputtering, set the sputtering power to 25W, set the substrate temperature to room temperature, set the sputtering time to 10s, take out the sample after sputtering, the surface of the substrate is covered with a layer of nano-scale gold film;

[004...

Embodiment 2

[0045] A method for preparing a one-dimensional single-crystal germanium-based graphene plasmonic nanostructure, specifically as follows:

[0046] Step 1: Cut the silicon wafer into the desired size, put it into a beaker, and use acetone solution to sonicate for 15 minutes, then put it in isopropanol solution and sonicate for 15 minutes, and finally rinse with ethanol and blow dry with a nitrogen gun for later use;

[0047] Step 2: Put the gold target and the cleaned silicon wafer into the magnetron sputtering instrument respectively, turn on the pump switch, and let the working gas 20sccm Ar, wait until the vacuum degree of the sputtering chamber reaches 7×10 -4 pa, select the radio frequency mode of magnetron sputtering, set the sputtering power to 25W, set the substrate temperature to 400°C, set the sputtering time to 20s, take out the sample after sputtering, the surface of the substrate is covered with a layer of nanoscale Gold film;

[0048] Step 3: Weigh 300mg of germa...

Embodiment 3

[0051] A method for preparing a one-dimensional single-crystal germanium-based graphene plasmonic nanostructure, specifically as follows:

[0052] Step 1: Cut the silicon wafer into the desired size, put it into a beaker, and use acetone solution to sonicate for 15 minutes, then put it in isopropanol solution and sonicate for 15 minutes, and finally rinse with ethanol and blow dry with a nitrogen gun for later use;

[0053] Step 2: Put the gold target and the cleaned silicon wafer into the magnetron sputtering instrument respectively, turn on the pump switch, and let the working gas 20sccm Ar, wait until the vacuum degree of the sputtering chamber reaches 7×10 -4 pa, select the radio frequency mode of magnetron sputtering, set the sputtering power to 25W, set the substrate temperature to 400°C, set the sputtering time to 10s, take out the sample after sputtering, the substrate surface is covered with a layer of nano-scale Gold film;

[0054] Step 3: Weigh 500mg of germanium p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method of a one-dimensional single crystal germanium-based graphene plasmon nanostructure. The preparation method comprises the following steps: (1) sputtering a gold nano film on a substrate by using a magnetron sputtering method; (2) growing a germanium-doped single crystal nanowire on the substrate obtained in the step (1) by adopting chemical vapor deposition; and (3) directly growing high-quality graphene on the surface of the germanium-doped single crystal nanowire obtained in the step (2) by adopting chemical vapor deposition to obtain the one-dimensional germanium-based graphene surface plasmon nanostructure. According to the invention, graphene directly grows on the surface of a germanium single crystal nanowire through a chemical vapor deposition method, so that the traditional graphene film transfer process is avoided, the influence of the transfer process on the carrier mobility of graphene is reduced to the maximum extent, and coupling of mid-infrared surface plasmons between germanium and graphene is enhanced; and the material provided by the invention has a strong and adjustable surface plasmon effect, and is expected to be widely applied to the fields of molecular fingerprint detection, intermediate infrared sensing, photon chips and the like.

Description

technical field [0001] The invention relates to the field of preparation of polariton nanostructures, in particular to a method for preparing one-dimensional single-crystal germanium-based graphene plasmonic nanostructures. Background technique [0002] With the rapid development of modern information technology, people have higher and higher requirements for device miniaturization, high integration and optical data processing. Enhancing the interaction between electrons, photons and matter at the nanoscale scale to achieve optical transmission and manipulation has become a common concern. hotspot. Surface plasmons can break through the traditional optical diffraction limit and have strong local electromagnetic field enhancement characteristics, making them have broad application prospects in the fields of high-sensitivity biological detection, sensing, and new light sources. [0003] However, most of the current research on plasmons is based on noble metals such as gold an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B29/08C30B29/60C23C14/16C23C14/18C23C14/35C23C14/54C23C16/26C23C28/00
CPCC30B25/18C30B29/08C30B29/60C23C14/35C23C14/165C23C14/185C23C16/26C23C28/322C23C28/34C23C14/542Y02E60/10
Inventor 陈珂常凯莉顾玉宗王红芹
Owner HENAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products