High-quality ilmenite structure zinc metatitanate single crystal film and preparation method and application thereof

A technology of zinc metatitanate and single crystal thin film, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of zinc metatitanate single crystal thin film material that has not yet been considered, and rarely considers the film and substrate Lattice mismatch, lack of semiconductor optoelectronic properties and other issues, to achieve the effect of fewer defects, complete lattice arrangement, and complete lattice structure

Active Publication Date: 2022-01-21
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (1) Most of the zinc metatitanate materials currently prepared are powder, nanostructure and polycrystalline film. The crystal phase of the material is often mixed-phase polycrystalline and single-phase polycrystalline structure, and there are problems such as poor crystal quality and many defects.
So far, there has been no report on zinc metatitanate single crystal thin film materials
[0006] (2) The research on zinc metatitanate mostly improves the photocatalytic performance and dielectric performance of the material, but lacks the research on its semiconductor photoelectric properties
The currently reported substrate materials for growing zinc metatitanate films are SiO 2 / Si and ITO substrates, little consideration is given to the lattice mismatch between the film and the substrate

Method used

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  • High-quality ilmenite structure zinc metatitanate single crystal film and preparation method and application thereof
  • High-quality ilmenite structure zinc metatitanate single crystal film and preparation method and application thereof
  • High-quality ilmenite structure zinc metatitanate single crystal film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] LiNbO 3 (006) is the substrate, 99.99% of the ceramic target is the target material, and the zinc metatitanate film is prepared by PLD technology.

[0063] Proceed as follows:

[0064] (1) Clean LiNbO 3 (006) The substrate and the zinc metatitanate target are respectively placed on the substrate and the target in the reaction chamber, and the reaction chamber is closed. Turn on the molecular pump and pump the reaction chamber to a high vacuum with a vacuum degree of 8.5×10 -5 Pa, the substrate base is heated to 700°C;

[0065] (2) Open the high-purity oxygen cylinder, feed oxygen into the reaction chamber, control the oxygen flow to 20 sccm with a gas flow meter, adjust the reaction chamber valve, stabilize the reaction chamber pressure at 5 Pa, and keep for 30 minutes;

[0066] (3) Turn on the laser, adjust the laser to an energy stable mode, the single pulse energy is 200mJ, the burst length is 20ns, and the laser pulse frequency is 4Hz. Start the laser for 10 mi...

Embodiment 2

[0074] Preparation of ZnTiO by PLD Technology 3 The single crystal thin film, the target and substrate used, and the preparation process are the same as those in Example 1, except that the substrate temperature is 650°C. The ZnTiO prepared in this embodiment 3 The film has a single epitaxial orientation of (003) crystal plane, but compared with Example 1, ZnTiO 3 The intensity of the diffraction peak of the (003) crystal plane decreases, and the half-maximum width also increases, indicating that the quality of the thin film single crystal prepared at the substrate temperature decreases.

Embodiment 3

[0076] Preparation of ZnTiO by PLD Technology 3 The single crystal thin film, the target and substrate used, and the preparation process are the same as those in Example 1, except that the substrate temperature is 750°C. The ZnTiO prepared in this embodiment 3 The film has a single epitaxial orientation of the (003) crystal plane. Compared with Example 1, the change of the diffraction peak intensity and peak width of the (003) crystal plane of the film all indicates that the crystalline quality of the film is reduced.

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Abstract

The invention relates to a high-quality ilmenite structure zinc metatitanate single crystal film and a preparation method and application thereof. The chemical composition of the film is zinc metatitanate and a hexagonal ilmenite structure single crystal material. A zinc metatitanate target material is used as a raw material, and a pulse laser deposition mode is adopted for preparation in a substrate. The zinc metatitanate single crystal thin film is complete in internal lattice arrangement, few in defect and free of twin crystal structures, the relative average transmittance in a visible light region can reach 95% or above, and the zinc metatitanate single crystal thin film has wide application prospects in the field of transparent optoelectronic devices.

Description

technical field [0001] The invention relates to a high-quality ilmenite structure zinc metatitanate single crystal thin film and a preparation method thereof, belonging to the technical field of semiconductor optoelectronic materials. Background technique [0002] In recent years, with the continuous development of semiconductor technology, wide bandgap oxide semiconductor materials have become one of the research hotspots. The ternary oxide zinc metatitanate (ZnTiO 3 ) is a very widely used functional material, which combines the advantages of zinc oxide and titanium oxide, and has excellent photoelectric properties, so it is a promising oxide semiconductor material. Zinc metatitanate has two structures of cubic and hexagonal ilmenite. At room temperature, the bandgap width of zinc metatitanate is about 3.2-3.7eV, and it is a wide bandgap semiconductor material. ZnTiO 3 Because of its excellent photoelectric properties and high specific surface area, it has potential app...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/32C30B23/02
CPCC30B29/32C30B23/025C30B23/002
Inventor 栾彩娜马瑾张彪
Owner SHANDONG UNIV
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