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Method for cleaning indium phosphide substrate wafer

An indium phosphide and wafer technology, which is applied in the application field of semiconductor material production, can solve the problems of excessive surface impurity content, the quality of the wafer needs to be improved, and the high content of sulfur on the surface of the substrate, so as to improve the yield, improve the surface quality of the substrate, Effects of optimization and substrate surface quality

Active Publication Date: 2021-12-14
广东先导微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the surface cleanliness, roughness, and oxide layer thickness of this conventional indium phosphide cleaning process are too thick. At the same time, uncontrollable white fog defects will be generated on the wafer, and the surface impurity content exceeds the standard and does not meet the requirements. The overall yield is low and insufficient.
The cleaning method in the Chinese patent application CN113035690A also has defects such as relatively high sulfur content on the surface of the substrate after cleaning, which affects the epitaxy of the substrate, and the quality of the cleaned wafer needs to be improved.

Method used

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  • Method for cleaning indium phosphide substrate wafer
  • Method for cleaning indium phosphide substrate wafer

Examples

Experimental program
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Effect test

Embodiment 1

[0034] A kind of cleaning method of indium phosphide substrate wafer, its concrete process flow chart is as figure 1 shown, including:

[0035] (1) Select a group of 20 pieces of indium phosphide 2-inch wafers that have been polished and waxed by waxing and polishing process, and use a special cleaning fixture to take a piece of indium phosphide wafer in order to clamp them. Soak in hot sulfuric acid at ℃ for 5s;

[0036] (2) Soak in sulfuric acid with a mass fraction of 96% at room temperature for 2 seconds, then put it into a water bowl, and use a water gun to rinse the water bowl at the same time to keep the water overflowing. The overflow water volume is 10-50L / min. The bowling time is 5-10s, and the water gun flushing time is 30s;

[0037] (3) Soak in S1 cleaning solution (a mixture of water, hydrogen peroxide and ammonia peroxide with a volume ratio of 1:2:10) at 4°C for 60 seconds, and rotate the wafer clamp continuously during the soaking process to make the surface ...

Embodiment 2

[0044] A kind of cleaning method of indium phosphide substrate wafer, its specific process flow chart is as figure 1 shown, including:

[0045] (1) Select a group of 9 pieces of indium phosphide 3-inch wafers that have been polished and waxed by waxing and polishing process, and use a special cleaning fixture to take a piece of indium phosphide wafer in order to clamp. Soak in hot sulfuric acid at 65°C for 5s;

[0046](2) Soak in sulfuric acid with a mass fraction of 96% and room temperature for 3 seconds; then put it into a water bowl, and at the same time use a water gun to rinse the water bowl to keep the water overflowing. The overflow water volume is 10-50L / min. The time is 5-10s, and the subsequent flushing time is 40s;

[0047] (3) Soak in S1 cleaning solution (a mixture of water, hydrogen peroxide and ammonia peroxide with a volume ratio of 1:2:3) at 4°C for 60s, and rotate the wafer clamp continuously during the soaking process to make the surface of the wafer recei...

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Abstract

The invention discloses a method for cleaning an indium phosphide substrate wafer. The method comprises the following steps: soaking the wafer in hot sulfuric acid and cold sulfuric acid in sequence, cleaning the wafer with S1 cleaning liquid, S2 cleaning liquid and S3 cleaning liquid, and finally cleaning the wafer by hydrogen peroxide. Compared with the prior art, the method for cleaning the indium phosphide substrate wafer has the advantages that the impurity ion content of the cleaned surface is lower, the epitaxial defect rate is reduced, the epitaxial layer is matched with the indium phosphide substrate layer better, the surface quality of the substrate is obviously optimized and improved, and on the premise that the roughness of the polished wafer is not damaged, the thickness of an oxide layer can be reduced, and the content of surface rime fog and surface impurities can be effectively controlled; and the cleaning method remarkably increases the yield of products and greatly reduces the production cost.

Description

technical field [0001] The invention belongs to the application field of semiconductor material production, and specifically relates to an optimized, high-yield, and high-efficiency cleaning method for indium phosphide substrate wafers. Background technique [0002] As a second-generation semiconductor material, indium phosphide (InP) is one of the important III-V compound semiconductor materials, and it is also a new generation of electronic functional materials after Si and GaAs. Indium phosphide has many advantages. Indium phosphide has a direct transition energy band structure, high electro-optical conversion efficiency and electron mobility, and is easy to be made into a semi-insulating sheet material. It is suitable for making high-frequency microwave devices and circuits. It has a high operating temperature and has Strong radiation resistance, high conversion efficiency as a solar cell material. These characteristics determine its wide application in civil and milita...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02052Y02P70/50
Inventor 郑金龙周铁军马金峰刘良副董晨晨曾琦宋向荣
Owner 广东先导微电子科技有限公司
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