Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Annealing method of crystalline silicon solar cell, and crystalline silicon solar cell

A technology of solar cells and crystalline silicon, which is applied in the field of solar cells to achieve the effects of improving potential-induced attenuation, improving photoelectric conversion efficiency, and reducing surface loads

Pending Publication Date: 2021-12-10
TIANJIN AIKO SOLAR ENERGY TECH CO LTD +3
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] This application provides a method for annealing crystalline silicon solar cells and crystalline silicon solar cells, aiming to solve the problem of how to improve the annealing process of crystalline silicon solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Annealing method of crystalline silicon solar cell, and crystalline silicon solar cell
  • Annealing method of crystalline silicon solar cell, and crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, and are not intended to limit the present application.

[0023] see figure 1 , the annealing method of the crystalline silicon solar cell of the embodiment of the present application, comprising:

[0024] Step S13: putting the silicon wafer to be oxidized into an annealing furnace;

[0025] Step S14: Perform thermal oxidation treatment on the silicon wafer in the annealing furnace with nitrogen and oxygen to form a silicon oxide layer on the silicon wafer, the proportion of oxygen is in the range of 75%-90%, and the proportion of nitrogen is in the range of 10%-25 %;

[0026] Step S15 : performing an annealing treatment on th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is suitable for the technical field of solar cells, and provides an annealing method of a crystalline silicon solar cell, and the crystalline silicon solar cell. The annealing method of the crystalline silicon solar cell comprises the following steps: putting a silicon wafer to be oxidized into an annealing furnace; carrying out thermal oxidation treatment on the silicon wafer in the annealing furnace through nitrogen and oxygen, so as to form a silicon oxide layer on the silicon wafer, wherein the proportion range of the oxygen is 75-90%, and the proportion range of the nitrogen is 10-25%; and cooling and annealing the silicon wafer. Therefore, the surface of the silicon wafer can be better passivated, the surface load of minority carriers is reduced, and the photoelectric conversion efficiency is improved. Meanwhile, a more compact silicon oxide layer can be generated, and the PID of the battery piece is improved.

Description

technical field [0001] The application belongs to the technical field of solar cells, and in particular relates to an annealing method for a crystalline silicon solar cell and a crystalline silicon solar cell. Background technique [0002] In related technologies, the process of crystalline silicon solar cells includes texturing, diffusion, SE laser, etching, annealing, back coating, front coating, back laser grooving, screen printing and test sorting. Efficiency and reliability have a big impact. However, the oxygen flow rate in the annealing process is usually in the range of 500-1500 sccm, and the oxidation effect of the battery sheet is not obvious. Based on this, how to improve the annealing process of crystalline silicon solar cells has become an urgent problem to be solved. Contents of the invention [0003] The present application provides a method for annealing a crystalline silicon solar cell and a crystalline silicon solar cell, aiming at solving the problem o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/1804H01L31/1864H01L31/02167H01L31/1868Y02E10/547Y02P70/50
Inventor 李吉杨联赞时宝林纲正陈刚
Owner TIANJIN AIKO SOLAR ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com