Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Radiation refrigeration thin film material based on indium oxide nanocrystalline doping and preparation method thereof

A technology for radiation refrigeration and thin film materials, applied in the field of radiation refrigeration thin film materials and their preparation, can solve the problems of difficult to achieve full coverage, inability to enhance coverage, sharp absorption peaks, etc., and achieve good regional adaptability, low cost, and low preparation cost. Effect

Inactive Publication Date: 2021-11-26
YANGZHOU UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The infrared spectrum characteristics of the widely used polymer-based radiation refrigeration materials are mainly caused by molecular vibration or rotation, and their absorption characteristics are shown as fixed peak positions and peak widths in the infrared spectrum, which is difficult to cover all or under ideal conditions. Most window radiation bands
In recent studies, the introduction of nanoparticles that absorb in the atmospheric window into the polymer matrix can solve part of the problem, but the conventionally used SiO 2 、TiO 2 The absorption peaks produced by isoparticles based on phonon resonance are often sharp and narrow, and it is impossible to take advantage of the enhanced coverage provided by a single type of nanoparticle to cover the range of two atmospheric windows

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radiation refrigeration thin film material based on indium oxide nanocrystalline doping and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] This embodiment provides nanocrystals doped indium oxide-based radiation cooling film material according to mole percent, comprising the following components: 0.5 to 15% tin, indium oxide crystal 85 to 99.5%;

[0029] According to which the volume fraction thereof, comprising the following components: tin-doped indium oxide crystal 3 to 5%, polymethyl methacrylate (poly methyl methacrylate, PMMA) 95 ~ 97%;

[0030] A mass percentage thereof, comprising the following components: tin-doped indium oxide crystal 16-24%, PMMA76-24%.

[0031] Indium oxide prepared by the invention is finished nanocrystalline direct band gap semiconductor, band gap of about 3.7eV, X-ray diffraction main diffraction peaks at 21.2 °, 30.4 °, 35.5 °, 37.5 °, 41.8 °, 45.6 °, 51.1 °, 56 °, 60.6 °.

Embodiment 2

[0033] The present embodiment provides a method for preparing nanocrystals doped indium oxide thin film material based on radiant cooler, comprising the steps of:

[0034] Indium acetate powder (1) 1mmol and dispersed in 10ml of n-octyl ether solution, then add 2-ethylhexanoate stannous 0.2mmol of n-octanoic acid and 3.6mmol 10mmol oleylamine, and indium acetate suspension was added to a three-neck flask together, while heating to 80 deg.] C with nitrogen purge and at 600r / min was stirred for 30min, indium acetate until the powder was completely dissolved, then the solution became clear and transparent. Under a nitrogen atmosphere and then the solution was heated to 150 deg.] C, heated and stirred sufficiently, and then heated to 280 deg.] C and stirred sufficiently; end of the reaction the final dark green solution was obtained, cooled to room temperature, ethyl acetate was added to the resulting product was purified by centrifugation to remove the supernatant after the speed o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a radiation refrigeration film material based on indium oxide nanocrystalline doping. The radiation refrigeration film material is characterized by comprising the following raw materials: tin, indium oxide and polymethyl methacrylate. The material has the characteristics of wide wave band and easiness in regulation and control, can cover all atmospheric windows, enhances the radiation refrigeration power of the material and approaches the theoretical limit. The preparation method is simple to operate, relatively low in cost and suitable for popularization and application.

Description

Technical field [0001] The present invention relates to the preparation of novel materials technical field, particularly relates to a radiation cooling film material and its preparation method nanocrystals doped indium oxide basis. Background technique [0002] In the present study, since the atmosphere of the primary window (8-13μm) contributed most of the cooling power, as compared to the secondary windows while a more reliable, less susceptible to the influence of water vapor. Therefore, people in the primary window band put a lot of effort, and designed different types of near-perfect infrared emitter. Various studies have been reported for selective cooling power spectral radiation emitter primary window of up to 100W / m2 or more, and in recent years, it reported cooling power is increasing. Therefore, the ability to estimate the ultimate cooling technology is a blind spot in the current study, researchers need a theoretical limit for further reference, to measure the poten...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L33/12C08K3/22
Inventor 陈智顾宇朱荣康
Owner YANGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com