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Composite film electrode based on low-cost metal and transparent conductive oxide and application of composite film electrode in perovskite photoelectric device

A composite thin film, transparent and conductive technology, which is applied in the manufacture of electrical solid devices, semiconductor devices, semiconductor/solid devices, etc., can solve the problems of device efficiency decline, battery internal resistance increase, easy diffusion, etc., and achieve excellent conductivity and stability performance, high photoelectric conversion efficiency, and improved humidity stability

Pending Publication Date: 2021-10-08
深圳无限光能技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Noble metal electrodes are not only costly, but also tend to adversely affect the performance of perovskite optoelectronic devices during use
Studies have shown that metal electrodes will diffuse into the perovskite layer during heating or long-term use, resulting in a gradual increase in defects in the perovskite layer, resulting in a significant decline in the performance parameters of the device
On the other hand, when the perovskite layer is exposed to light or heat, iodide ion defects are easy to diffuse to the crystal surface, and react with the metal electrode under the action of an electric field to form non-conductive metal iodide, which leads to an increase in the internal resistance of the battery. lead to a decrease in device efficiency or even failure
Finally, when the external humidity of the device is high, the water vapor in the external environment will react with the perovskite layer, causing the perovskite layer to decompose, which seriously affects the stability of the perovskite photoelectric device.

Method used

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  • Composite film electrode based on low-cost metal and transparent conductive oxide and application of composite film electrode in perovskite photoelectric device
  • Composite film electrode based on low-cost metal and transparent conductive oxide and application of composite film electrode in perovskite photoelectric device
  • Composite film electrode based on low-cost metal and transparent conductive oxide and application of composite film electrode in perovskite photoelectric device

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1, prepare perovskite solar cell

[0032] (1) Preparation of electron transport layer on transparent conductive oxide substrate

[0033] The tin oxide solution was spin-coated on the transparent conductive oxide substrate with a thickness of about 30 nm.

[0034] (2) Preparation of perovskite layer on the electron transport layer

[0035] will FA 0.9 MA 0.1 PB 3 The perovskite precursor solution is spin-coated on the electron transport layer with a thickness of about 600 nm.

[0036] (3) Preparation of a hole transport layer on the perovskite layer

[0037] The hole-transporting material Spiro-OMeTAD is spin-coated on the perovskite layer by solution spin-coating, with a thickness of about 150 nm.

[0038] (4) Preparation of a composite electrode layer on the hole transport layer

[0039] First, molybdenum oxide with a thickness of about 10 nm is thermally evaporated on the hole transport layer as a buffer layer in the magnetron sputtering process; the...

Embodiment 2

[0042] Embodiment 2, prepare perovskite solar cell

[0043] (1) Preparation of electron transport layer on transparent conductive oxide substrate

[0044] The tin oxide solution was spin-coated on the transparent conductive oxide substrate with a thickness of about 30 nm.

[0045] (2) Preparation of perovskite layer on the electron transport layer

[0046] will FA 0.9 MA 0.1 PB 3 The perovskite precursor solution is spin-coated on the electron transport layer with a thickness of about 600 nm.

[0047] (3) Preparation of a hole transport layer on the perovskite layer

[0048] The hole-transporting material Spiro-OMeTAD is spin-coated on the perovskite layer by solution spin-coating, with a thickness of about 150 nm.

[0049] (4) Preparation of a composite electrode layer on the hole transport layer

[0050]First, molybdenum oxide with a thickness of about 10 nm is thermally evaporated on the hole transport layer as a buffer layer in the magnetron sputtering process; then...

Embodiment 3

[0052] Embodiment 3, preparation perovskite solar cell

[0053] (1) Preparation of electron transport layer on transparent conductive oxide substrate

[0054] The tin oxide solution was spin-coated on the transparent conductive oxide substrate with a thickness of about 30 nm.

[0055] (2) Preparation of perovskite layer on the electron transport layer

[0056] will FA 0.9 MA 0.1 PB 3 The perovskite precursor solution is spin-coated on the electron transport layer with a thickness of about 600 nm.

[0057] (3) Preparation of a hole transport layer on the perovskite layer

[0058] The hole-transporting material Spiro-OMeTAD is spin-coated on the perovskite layer by solution spin-coating, with a thickness of about 150 nm.

[0059] (4) Preparation of a composite electrode layer on the hole transport layer

[0060] First, molybdenum oxide with a thickness of about 10nm is thermally evaporated on the hole transport layer as a buffer layer in the magnetron sputtering process; ...

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Abstract

The invention discloses a composite film electrode and application thereof in a perovskite photoelectric device. The composite film electrode comprises a transparent conductive oxide layer and a low-cost metal layer which are sequentially compounded, and the transparent conductive oxide layer is made of any one or combination of indium tin oxide, fluorine-doped tin oxide, tungsten-doped indium oxide, indium zinc oxide, aluminum-doped zinc oxide and zinc tin oxide. The low-cost metal layer is made of any one of copper, aluminum, nickel, zinc, tin, iron and silver and alloy and combination of the copper, the aluminum, the nickel, the zinc, the tin, the iron and the silver. The invention provides the composite film electrode based on the low-cost metal and the transparent conductive oxide, and the composite film electrode is successfully applied to a perovskite photoelectric device represented by a perovskite solar cell, so that the comprehensive stability of the perovskite photoelectric device is greatly improved on the basis of realizing relatively high photoelectric conversion efficiency of the perovskite photoelectric device.

Description

technical field [0001] The invention relates to a composite film electrode based on low-cost metal and transparent conductive oxide and its application in perovskite photoelectric devices, belonging to the technical field of photoelectric materials and devices. Background technique [0002] Perovskite materials have achieved good performance in optoelectronic devices such as perovskite solar cells and perovskite electroluminescent devices (LEDs), and thus have attracted widespread attention. However, at present, perovskite photoelectric devices generally have problems such as poor stability, especially in terms of light stability, thermal stability, and humidity stability. There is still a big gap from commercial applications. [0003] At present, perovskite photoelectric devices represented by perovskite solar cells have attracted the attention of the photovoltaic industry due to their high photoelectric conversion efficiency (over 20%), low manufacturing cost, and relative...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/42H01L51/48
CPCH10K71/60H10K30/81H10K30/82H10K30/30Y02E10/549
Inventor 易陈谊蒋超凡周俊杰谭理国李明昊李航刘越
Owner 深圳无限光能技术有限公司
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