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A kind of glass encapsulation method to improve LED light extraction rate

A glass encapsulation and light yield technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor heat resistance and anti-aging properties of epoxy resin or silicone, cost problems, and large difference in refractive index, and achieve Improve LED light output, reduce light leakage, and improve the effect of light output

Active Publication Date: 2022-07-12
SHENZHEN FANGJING TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the past, people mixed phosphor powder with epoxy resin or silica gel to coat the surface of LED chips to realize LED packaging. However, epoxy resin or silica gel has poor heat resistance and aging resistance. In recent years, glass substrate packaging has been used as a new packaging carrier method
However, because the upper and lower surfaces of the LED packaging glass are flat and smooth, and the refractive index difference between the glass and the air is large, there is a total emission problem at the interface.
In order to improve the light extraction rate, a layer of silver reflective layer is usually plated on the metal circuit ( figure 1 ), but the area occupied by the metal circuit on the glass substrate is very low, and complete specular reflection cannot be achieved, and a certain proportion of light still leaks from the other side of the glass substrate
[0006] Patent CN203883002U discloses a multi-faceted display LED packaging structure. A silver-plated layer is provided on the ITO conductive layer corresponding to the LED chip. On the one hand, the use of silver metal brings about cost problems, and on the other hand, the LED light output rate is still low. ideal

Method used

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  • A kind of glass encapsulation method to improve LED light extraction rate
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Examples

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Effect test

Embodiment 1

[0035] A glass encapsulation method for improving LED light yield, such as figure 2As shown, the sapphire substrate 1, the gallium nitride layer, the metal conductive layer 8, and the glass substrate 10 are stacked in sequence from top to bottom; wherein, along the direction away from the sapphire substrate 1, the gallium nitride layer includes gallium nitride epitaxial N Type layer 2, GaN epitaxial light-emitting layer 3, GaN epitaxial P-type layer 4; processing the light reflection layer 12 on the back of the glass substrate 10, the specific method is as follows:

[0036] (1) First use polystyrene as a template and ethyl orthosilicate as a raw material to prepare porous silica microspheres, and then mix zirconium oxynitrate hydrate and porous silica microspheres to make a slurry. Solidifying to form a green body, nitriding and sintering to obtain composite microspheres;

[0037] (2) using the composite microspheres and antimony oxide as raw materials to prepare a premix fo...

Embodiment 2

[0053] A glass encapsulation method for improving LED light yield, such as figure 2 As shown, the sapphire substrate 1, the gallium nitride layer, the metal conductive layer 8, and the glass substrate 10 are stacked in sequence from top to bottom; wherein, along the direction away from the sapphire substrate 1, the gallium nitride layer includes gallium nitride epitaxial N Type layer 2, GaN epitaxial light-emitting layer 3, GaN epitaxial P-type layer 4; processing the light reflection layer 12 on the back of the glass substrate 10, the specific method is as follows:

[0054] (1) First use polystyrene as a template and ethyl orthosilicate as a raw material to prepare porous silica microspheres, and then mix zirconium oxynitrate hydrate and porous silica microspheres to make a slurry. Solidifying to form a green body, nitriding and sintering to obtain composite microspheres;

[0055] (2) using the composite microspheres and antimony oxide as raw materials to prepare a premix f...

Embodiment 3

[0071] A glass encapsulation method for improving LED light yield, such as figure 2 As shown, the sapphire substrate 1, the gallium nitride layer, the metal conductive layer 8, and the glass substrate 10 are stacked in sequence from top to bottom; wherein, along the direction away from the sapphire substrate 1, the gallium nitride layer includes gallium nitride epitaxial N Type layer 2, GaN epitaxial light-emitting layer 3, GaN epitaxial P-type layer 4; processing the light reflection layer 12 on the back of the glass substrate 10, the specific method is as follows:

[0072] (1) First use polystyrene as a template and ethyl orthosilicate as a raw material to prepare porous silica microspheres, and then mix zirconium oxynitrate hydrate and porous silica microspheres to make a slurry. Solidifying to form a green body, nitriding and sintering to obtain composite microspheres;

[0073] (2) using the composite microspheres and antimony oxide as raw materials to prepare a premix f...

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Abstract

The invention provides a glass encapsulation method for improving the light extraction rate of an LED. The sapphire substrate, the gallium nitride layer, the metal conductive layer and the glass substrate are sequentially stacked from the inside to the outside; wherein, along the direction away from the sapphire substrate, the nitrided The gallium layer includes a gallium nitride epitaxial N-type layer, a gallium nitride epitaxial light-emitting layer, and a gallium nitride epitaxial P-type layer; a light reflection layer is processed on the backside of the glass substrate. The invention processes the light reflection layer on the back of the glass substrate, replaces the silver-plated reflection layer of the front metal conductive layer, reduces the use of precious metal silver, and greatly reduces the cost of glass packaging. Moreover, the light reflection layer is fully covered on the glass substrate, which effectively reduces light leakage and greatly improves the LED light extraction rate.

Description

technical field [0001] The invention relates to the technical field of lighting, in particular to a glass encapsulation method for improving the light extraction rate of LEDs. Background technique [0002] LED, namely Light Emitting Diode, is a new type of solid-state light source. It has the advantages of high luminous efficiency, energy saving and environmental protection, and long life. It is the main development direction of the future lighting source market. LEDs have been widely used in display backlights, automotive headlights, indoor and outdoor lighting, etc. [0003] The LEDs on the market are mainly LEDs based on GaN materials, which have gained extensive attention and rapid development worldwide. In order to obtain high-brightness LEDs, the external quantum efficiency of LEDs must be improved. The external quantum efficiency is mainly determined by the internal quantum efficiency and light extraction efficiency. The internal quantum efficiency of LEDs is alrea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/60H01L33/56
CPCH01L33/60H01L33/56H01L2933/005H01L2933/0058
Inventor 李国琪詹鑫源
Owner SHENZHEN FANGJING TECHNOLOGY CO LTD
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