Preparation method of metal bump structure
A technology of metal bumps and insulating pads, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc., can solve problems such as short-circuiting and affecting chip performance
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[0020] The embodiments described below by referring to the figures are exemplary, and are only for explaining the present invention, and cannot be construed as limiting the present invention.
[0021] Embodiments of the present invention: as Figure 9 As shown, a metal bump structure is disclosed, and the metal bump structure includes:
[0022] A bare chip 10, wherein the bare chip 10 includes a substrate 101, the upper surface of the substrate 101 is formed with a pad 102 and a passivation layer 103, and the pad 102 is outward from the passivation layer opening 104 on the passivation layer 103 Exposure; the material of the pad 102 includes metals such as aluminum and copper and metal alloys; the passivation layer 103 is used as a protective layer, and the material includes inorganic thin film materials such as silicon nitride and silicon oxide or dielectric properties such as polyimide. Good photosensitive organic polymer material.
[0023] The metal bump 20 is arranged on ...
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