Cell structure of trench gate IGBT, preparation method thereof, and trench gate IGBT

A technology of trench gate and cell, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve the problem of increasing chip area

Active Publication Date: 2021-09-14
GREE ELECTRIC APPLIANCES INC +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above problems, the present disclosure provides a trench gate IGBT cell structure, its preparation method and trench gate IGBT, which solves the problem of increased chip area caused by dummy gates in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cell structure of trench gate IGBT, preparation method thereof, and trench gate IGBT
  • Cell structure of trench gate IGBT, preparation method thereof, and trench gate IGBT
  • Cell structure of trench gate IGBT, preparation method thereof, and trench gate IGBT

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] like figure 2 and image 3 As shown, an embodiment of the present disclosure provides a cell structure 200 of a trench gate IGBT, including a substrate 201 , a drift layer 202 , a first trench gate 203 , a second trench gate 204 , a well region 205 , and a source region 206 , a second source region 206 , an interlayer dielectric layer 207 , a first connection hole 208 , a second connection hole 209 , an emitter metal layer 210 , a collector region 211 and a collector metal layer 212 .

[0054] It should be noted that in order to figure 2 The shapes and positions of the first trench gate 203, the second trench gate 204, the source region 206, the first connection hole 208 and the second connection hole 209 are clearly displayed, so figure 2 The substrate 201 , the drift layer 202 , the interlayer dielectric layer 207 , the emitter metal layer 210 , the collector region 211 and the collector metal layer 212 are not shown. but combined image 3 The shapes and positi...

Embodiment 2

[0071] On the basis of Embodiment 1, this embodiment provides a method for fabricating a cell structure 200 of a trench gate IGBT. Figure 4 It is a schematic flowchart of a method for fabricating a cell structure 200 of a trench gate IGBT according to an embodiment of the present disclosure. Figure 5-Figure 15 It is a front plan view and a cross-sectional structural schematic diagram formed by the relevant steps of the preparation method of the cell structure 200 of the trench gate IGBT shown in the embodiment of the present disclosure. in, Image 6 , Figure 8 and Figure 10 It is a schematic top plan view of the front side formed by the relevant steps of the preparation method of the cell structure 200 of the trench gate IGBT. Below, refer to Figure 4 and Figure 5-Figure 15 The detailed steps of an exemplary method for fabricating the cell structure 200 of the trench gate IGBT according to the embodiment of the present disclosure will be described.

[0072] like ...

Embodiment 3

[0098] On the basis of the first embodiment, this embodiment provides a trench gate IGBT, which includes several cell structures 200 of the trench gate IGBT as described in the first embodiment.

[0099] Figure 16 The blocking voltage curves of a trench gate IGBT and a conventional trench gate IGBT are shown in an exemplary embodiment of the present disclosure, such as Figure 16 As shown, the two curves basically overlap, indicating that the trench gate IGBT provided by the present disclosure has the same blocking voltage capability as the conventional trench gate IGBT. Therefore, the first trench gate 203 and the second trench provided by the present disclosure have the same blocking voltage capability. The structure of the gate 204 integrated in one cell does not affect the blocking voltage capability of the trench gate IGBT.

[0100] Figure 17 is the saturation voltage curve diagram of a trench gate IGBT and a conventional trench gate IGBT shown in an exemplary embodim...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a cell structure of a trench gate IGBT, a preparation method thereof, and the trench gate IGBT. The cell structure comprises: a first conductive type substrate; a first conductive type drift layer positioned above the substrate; a first trench gate located in the drift layer and located in the center of the cellular structure, and a second trench gate penetrating through the first trench gate; and an emitter metal layer positioned above the drift layer. The first trench gate is connected to the emitter metal layer through a first connecting hole, and the second trench gate is isolated from the emitter metal layer through an interlayer dielectric layer. Under the condition that the cellular area is not changed, true and false grids are integrated in one cell, so that the problem that the chip area is increased due to the false grid is solved. The space between the grooves and the conducting channel are not influenced, the contact area of the emitter is increased, the conductivity modulation effect is improved, and the conduction voltage drop is reduced while the blocking voltage is not changed.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to a cell structure of a trench gate IGBT, a preparation method thereof, and a trench gate IGBT. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite fully controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It combines the low on-resistance and high withstand voltage characteristics of BJT and MOSFET, and also has many excellent characteristics such as voltage control, large input impedance, low driving power, small on-resistance, and low switching loss, and is widely used in medium and high power. Power electronic system. [0003] However, due to the relatively small size of the trench gate, the trench gate IGBT of the traditional structure leads to a high current density and a concentrated current, which is prone to short c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/423H01L21/331
CPCH01L29/7397H01L29/423H01L29/66348
Inventor 赵浩宇曾丹赵家宽刘勇强史波
Owner GREE ELECTRIC APPLIANCES INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap