Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Crimping type power chip packaging structure

A technology of power chip and packaging structure, applied in electrical components, electric solid devices, circuits, etc., to achieve the effect of improving switching speed, reducing switching loss, and uniform force

Pending Publication Date: 2021-09-03
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Therefore, the technical problem to be solved by the present invention is to overcome the problem of how to improve the switching speed and reduce the switching loss of the pressure-bonded IGBT device in the prior art, so as to provide a pressure-bonded power chip packaging structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crimping type power chip packaging structure
  • Crimping type power chip packaging structure
  • Crimping type power chip packaging structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The inventors of the present application have found through research that as the current level increases, the IGBT device will generate a larger di / dt during the switching transient process. In the traditional packaging form, the emitter parasitic inductance is also included in the collector-emitter power loop and the gate drive loop, become the common emitter stray inductance, as figure 1 as shown, figure 1 "E" represents the emitter of the IGBT device, "C" represents the collector of the IGBT device, "G" represents the gate of the IGBT device, "Lg" represents the stray inductance of the drive circuit, and "Le" represents the stray common emitter Inductance, "Lc" stands for collector inductance. The di / dt with large switching transient will cause a large voltage drop on the common emitter stray inductance, which will have a great impact on the gate drive circuit, not only limiting the switching speed, And lead to more switching losses. In addition, oscillations in th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a crimping type power chip packaging structure. The structure comprises: a first electrode layer and a second electrode layer; a power chip; a composite connecting plate which is positioned between the first electrode layer and the second electrode layer and is positioned on the side part of the power chip, wherein the composite connecting plate comprises a first insulating plate, a first conducting layer positioned on one side of the first insulating plate, and a second conducting layer positioned on one side, back to the first conducting layer, of the first insulating plate, and the first conducting layer and the second conducting layer are spaced from the first electrode layer and the second electrode layer respectively; a grid electrode which is electrically connected with the first conducting layer through a first bonding wire; and an emitting electrode which is electrically connected with the second conducting layer through a second bonding wire. According to the crimping type power chip packaging structure, the switching speed is improved, and the switching loss is reduced.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to a crimping type power chip packaging structure. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), also known as Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), packaged The final IGBT module is directly applied to inverters, UPS uninterruptible power supplies and other equipment to play the role of switches. [0003] At present, power IGBT devices can be divided into soldering type and crimping type according to the packaging process. [0004] The high-power press-fit IGBT device combines the advantages of both IGBT and GTO, and has the characteristics of double-sided heat dissipation, easy series connection, high reliability, short-circuit failure, and large current capacity. The crimp-type...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L23/49H01L23/10H01L23/16H01L29/739
CPCH01L23/31H01L23/49H01L23/10H01L23/16H01L29/7393
Inventor 张西子代安琪吴军民王克胜高晋文
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com