Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

BiVO4/MnOOH film electrode, preparation method thereof and application of BiVO4/MnOOH film electrode in corrosion prevention of photo-generated cathode

A thin-film electrode and thin-film technology, which is applied in BiVO4/MnOOH thin-film electrode and its preparation, and the application field of photogenerated cathode anticorrosion, can solve the problem of limited metal photogenerated cathode protection ability, weak photoinduced charge separation and transfer ability, and difficult to effectively drive Photogenerated electron transfer and other issues, to achieve the effect of easy industrial mass production, broaden the absorption range, and enhance corrosion resistance

Active Publication Date: 2021-08-24
TAIZHOU UNIV +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the BiVO4 electrode has a high electron-hole recombination rate and poor water oxidation activity, resulting in weak photo-induced charge separation and transfer of BiVO4 electrodes, making it difficult to effectively drive The transfer of photogenerated electrons to the protective metal limits the ability of photogenerated cathodic protection of metals
In addition, BiVO4 electrodes have low stability and are prone to chemical corrosion and photocorrosion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • BiVO4/MnOOH film electrode, preparation method thereof and application of BiVO4/MnOOH film electrode in corrosion prevention of photo-generated cathode
  • BiVO4/MnOOH film electrode, preparation method thereof and application of BiVO4/MnOOH film electrode in corrosion prevention of photo-generated cathode
  • BiVO4/MnOOH film electrode, preparation method thereof and application of BiVO4/MnOOH film electrode in corrosion prevention of photo-generated cathode

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] The present invention provides the above-mentioned BiVO 4 The preparation method of / MnOOH film electrode comprises the following steps:

[0031] (1) Provide BiVO 4 thin film electrode;

[0032] (2) Using manganese chloride solution as the electrolyte, a three-electrode system is used to carry out photoelectric deposition, and the working electrode in the three-electrode system is the BiVO 4 Thin film electrode, to get BiVO 4 / MnOOH thin film electrode.

[0033] The present invention first provides BiVO 4 thin film electrodes. In the present invention, the BiVO 4 The preparation method of thin film electrode preferably comprises the following steps:

[0034] (1) mixing the soluble bismuth source with an aqueous citric acid solution to obtain a bismuth source citric acid mixed solution;

[0035] Coating the bismuth source citric acid mixture on the surface of the FTO glass, performing the first calcination, and obtaining a bismuth oxide film electrode on the surfa...

Embodiment 1

[0053] (1) Take the bismuth nitrate solid, add it to an aqueous solution of 0.1mol / L citric acid, and ultrasonicate it for 2 hours at a power of 300W to dissolve the bismuth nitrate to obtain a bismuth source citric acid mixed solution with a concentration of 0.3mol / L;

[0054] Use a pipette gun to pipette the above-mentioned bismuth source citric acid mixture, and drop-coat it on the surface of the FTO glass with a drop-coating volume of 40 μL / cm 2 , and then calcined at 550°C for 2h to obtain a bismuth oxide thin film electrode;

[0055] (2) Mix vanadyl acetylacetonate and dimethyl sulfoxide solution to obtain a concentration of vanadyl acetylacetonate solution of 0.3mol / L, pipette the vanadyl acetylacetonate solution and drop it on the bismuth oxide film electrode, The amount of dispensing is 60μL / cm 2 Place it in a muffle furnace for calcination at 500°C for 2 hours, cool it down to room temperature naturally, take out the thin film electrode, and soak it in 1mol / L sodium...

Embodiment 2

[0059] (1) Take the bismuth nitrate solid, add it to the aqueous solution of 0.2mol / L citric acid, and ultrasonicate it for 2h under the power of 300W to dissolve the bismuth nitrate to obtain a bismuth source citric acid mixed solution with a concentration of 0.5mol / L;

[0060] Use a pipette gun to pipette the above-mentioned bismuth source citric acid mixture, and drop-coat it on the surface of the FTO glass with a drop-coating volume of 80 μL / cm 2 , and then calcined at 550°C for 2h to obtain bismuth oxide film electrodes;

[0061] (2) Vanadyl acetylacetonate is mixed with dimethyl sulfoxide solution to obtain a vanadium source solution with a concentration of 0.5mol / L. Pipette the vanadium source solution and drop it on the bismuth oxide film electrode with a drop coating amount of 80μL / cm 2 , placed in a muffle furnace and calcined at 450°C for 2h, cooled naturally to room temperature, took out the thin film electrode, soaked in 1mol / L sodium hydroxide solution for 30min...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a BiVO4 / MnOOH film electrode, and belongs to the technical field of corrosion prevention materials. The BiVO4 / MnOOH film electrode obtained by the invention can absorb visible light, and effectively widens the absorption range of a light and solar energy spectrum; and loading of MnOOH accelerates the hole transfer speed on the surface of a BiVO4 electrode under the open-circuit potential, the recombination rate of current carriers is reduced, the injection efficiency of photo-generated electrons into a cathode metal material can be greatly increased when the BiVO4 / MnOOH film electrode is used for corrosion prevention of the photo-generated cathode, the negative shift of the self-corrosion potential of the cathode metal material can be effectively promoted, and therefore, the corrosion resistance of the cathode metal material in the chlorine-containing environment is enhanced. Meanwhile, direct contact between the BiVO4 photoelectrode and a solution is avoided through loading of the MnOOH, chemical corrosion of BiVO4 is avoided, and then the stability of the BiVO4 / MnOOH film electrode is improved.

Description

technical field [0001] The invention relates to the technical field of anti-corrosion materials, in particular to a BiVO 4 / MnOOH thin film electrode and its preparation method and application in photogenerated cathode anticorrosion. Background technique [0002] Corrosion of metal materials is ubiquitous in daily life, which not only causes pollution and waste of resources, but also presents various potential threats. Traditional electrochemical anti-corrosion technology, such as the cathodic protection method of impressed current and sacrificial anode, can realize the anti-corrosion function of metal by applying energy or sacrificial anode, but this method consumes a lot of electric energy and anode materials, which is not conducive to industrial application . Photoelectrochemical anti-corrosion technology uses solar energy to drive the photogenerated electrons on the semiconductor photoanode to transfer to the metal to achieve metal corrosion inhibition. This technology...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F13/14C25D9/04C23C18/12C23C28/04
CPCC23F13/14C25D9/04C23C18/1216C23C28/042
Inventor 付帅熊贤强褚雨潇陈啸武承林范利亚韩得满
Owner TAIZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com