A silicon carbide single crystal growth device capable of balancing the atmosphere of the growth system

Abstract

The invention discloses a silicon carbide single crystal growth device capable of balancing the atmosphere of a growth system, which includes a graphite crucible for holding silicon carbide powder and heating the silicon carbide to make the The silicon carbide powder is sublimated and decomposed into gas phase components; the seed crystal holder is used to hold the seed crystal capable of growing silicon carbide single crystal; the air pipe, including the outer air pipe and the inner air pipe, is used to capture and absorb the sublimated gas phase components, from The bottom of the trachea is slowly released into the silicon carbide powder; the halogen gas trachea is used to consume more silicon components in the initial stage of crystal growth, and the two work together to realize the gas phase silicon and carbon components in the sublimation process during the growth of silicon carbide single crystals. Medium dynamic balance, keep the ratio of carbon and silicon in the crystal growth area in the optimal range, and improve the quality of silicon carbide single crystal growth.

Description

technical field [0001] The invention relates to the field of silicon carbide single crystal preparation, more specifically, to a silicon carbide single crystal growth device capable of balancing the atmosphere of a growth system. Background technique [0002] Silicon carbide belongs to the third-generation semiconductor material and is a kind of wide-bandgap semiconductor material. Its main features are high thermal conductivity, high saturation, electron drift rate and high strike field strength, etc., so it is used in various semiconductor materials. It is It is one of the main materials for preparing high-temperature, high-frequency, and high-power devices, and has broad prospects in the fields of electric vehicles, communications, high-speed rail, and aerospace. [0003] At present, the methods for preparing silicon carbide single crystals include physical vapor transport method, high-temperature chemical vapor deposition method, and liquid phase epitaxy method. Among th...

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Problems solved by technology

[0005] With regard to the above-mentioned problems in the prior art, the purpose of the present invention is to propose a silicon carbide single crystal growth device that can balance the atmosphere of the growth system. First, the halogen gas is passed into the graphite crucible through the halogen gas gas pipe at the initial stage of crystallization, and then the consumption of crystals is realized. The purpose of more silicon components in the early stage of growth, and then through the cooperation between the suction and exhaust of the trachea to achieve the purpose of dynamic balance of gas phase silicon and carbon components in the sublimation process during the growth of silicon carbide single crystals, thus solving the problem of crystal The problem of excessive silicon vapor content in the growth area can reduce the internal defects of silicon carbide single crystal and reduce the corrosion phenomenon of the inner wall of graphite crucible. Single Crystal Growth Quality

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