Silicon carbide single crystal growth device capable of balancing atmosphere of growth system

Abstract

The invention discloses a silicon carbide single crystal growth device capable of balancing the atmosphere of a growth system, which comprises a graphite crucible used for containing silicon carbide powder and heating the silicon carbide to sublimate and decompose the silicon carbide powder into a gas phase component; a seed crystal support used for containing seed crystals capable of growing silicon carbide single crystals; a gas pipe which comprises an outer gas pipe and an inner gas pipe and used for capturing and absorbing sublimated and raised gas-phase components and slowly releasing the sublimated and raised gas-phase components into the silicon carbide powder from the bottom of the gas pipe; and a halogen gas pipe used for consuming more silicon components in the initial stage of crystal growth,wherein the halogen gas pipe and the halogen gas pipe are matched together to realize dynamic balance of gas-phase silicon and carbon components in the sublimation process in the growth process of the silicon carbide single crystal, so that the ratio of carbon to silicon in a crystal growth area is kept in an optimal range, and the growth quality of the silicon carbide single crystal is improved.

Description

technical field [0001] The invention relates to the field of silicon carbide single crystal preparation, more specifically, to a silicon carbide single crystal growth device capable of balancing the atmosphere of a growth system. Background technique [0002] Silicon carbide belongs to the third-generation semiconductor material and is a kind of wide-bandgap semiconductor material. Its main features are high thermal conductivity, high saturation, electron drift rate and high strike field strength, etc., so it is used in various semiconductor materials. It is It is one of the main materials for preparing high-temperature, high-frequency, and high-power devices, and has broad prospects in the fields of electric vehicles, communications, high-speed rail, and aerospace. [0003] At present, the methods for preparing silicon carbide single crystals include physical vapor transport method, high-temperature chemical vapor deposition method, and liquid phase epitaxy method. Among th...

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Problems solved by technology

[0005] With regard to the above-mentioned problems in the prior art, the purpose of the present invention is to propose a silicon carbide single crystal growth device that can balance the atmosphere of the growth system. First, the halogen gas is passed into the graphite crucible through the halogen gas gas pipe at the initial stage of crystallization, and then the consumption of crystals is realized. The purpose of more silicon components in the early stage of growth, and then through the cooperation between the suction and exhaust of the trachea to achieve the purpose of dynamic balance of gas phase silicon and carbon components in the sublimation process during the growth of silicon carbide single crystals, thus solving the problem of crystal The problem of excessive silicon vapor content in the growth area can reduce the internal defects of silicon carbide single crystal and reduce the corrosion phenomenon of the inner wall of graphite crucible. Single Crystal Growth Quality

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