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High-thermal-reliability multi-unit power integration module and processing technology thereof

A technology of power integration and reliability, which is applied in the field of multi-unit power integrated module structure and its processing technology, can solve the problems of high heating temperature of IGBT chips and narrow chopper circuit space, so as to improve heat dissipation efficiency, heat dissipation performance and reliability Sexuality and high efficiency

Active Publication Date: 2021-07-16
HUANGSHAN UNIV
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Problems solved by technology

As a result, the space of the chopper circuit is narrow, and the IGBT chip is seriously heated and the temperature is very high.

Method used

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  • High-thermal-reliability multi-unit power integration module and processing technology thereof
  • High-thermal-reliability multi-unit power integration module and processing technology thereof
  • High-thermal-reliability multi-unit power integration module and processing technology thereof

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Embodiment Construction

[0033] The present invention will be further described below in conjunction with drawings and embodiments.

[0034] The present invention proposes a multi-unit PIM structure with high thermal reliability, such as figure 1 As shown, it generally includes from top to bottom: chip layer, upper solder layer 13, copper wiring layer 16, ceramic layer 17, lower copper layer 18, lower solder layer 20, aluminum silicon carbide substrate 21; the copper wiring layer 16, The ceramic layer 17 and the lower copper layer 18 form a DBC liner (copper-clad ceramic liner) 19; the chip layer includes a plurality of silicon-based diode chips 10, silicon carbide SBD chips 11 and silicon-based IGBT chips 12, wherein there are six A silicon-based IGBT (insulated gate bipolar transistor) chip 12 and six silicon carbide SBD (Schottky barrier diode) chips 11 are connected in parallel to form a three-phase bridge inverter circuit 26, which consists of an independent silicon-based IGBT chip 12 A chopper ci...

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Abstract

The invention relates to a structure of a high-thermal-reliability multi-unit power integration module (PIM) and a processing technology thereof. The structure comprises a silicon-based IGBT chip, a silicon carbide Schottky barrier diode chip, a silicon-based diode chip, a copper / graphene nanosheet (Cu / GN) heterogeneous thin film, graphene-based packaging resin, a copper-clad ceramic lining plate, a solder layer, a nano-silver conductive adhesive, a bonding wire, a copper gasket, a plastic packaging shell, an aluminum silicon carbide substrate, heat-conducting silicone grease and a radiator. The Cu / GN heterogeneous thin film is adopted to replace a local bonding wire, local heat of a chopper circuit IGBT chip in a high-power PIM is dissipated through an upper heat conduction path and a lower heat conduction path, and the local hot spot temperature on the chip is reduced; and meanwhile, the graphene is uniformly added into the epoxy resin to serve as a potting material so that the overall thermal resistance of the high-power PIM from a chip to the environment is reduced, and the heat dissipation efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a multi-unit power integrated module structure with high thermal reliability and a processing technology thereof. Background technique [0002] Compared with the traditional discrete system, the power integrated module PIM (power integrated module) has high integration, less external wiring and welding points, less parasitic parameters, and good frequency characteristics. At the same time, the integrated power module also has the advantages of low conduction voltage, high overload temperature, small switching loss, and strong short-circuit robustness. Therefore, it is widely used in the fields of industrial transmission and household air conditioners. However, the compact structure enables the PIM to have a higher heat flux density at the same power level. The deterioration of internal heat dissipation conditions and the sharp increase of internal temperature...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/07H01L25/18H01L21/48H01L23/367H01L23/498
CPCH01L25/071H01L25/18H01L23/49805H01L23/49844H01L23/3672H01L21/4882H01L21/4846H01L2224/48137H01L2224/73265H01L2224/40137H01L2224/48227H01L2224/32225H01L2224/0603H01L2924/00
Inventor 胡娟侯丽周云艳鲍婕芦莎汪礼郑小帆
Owner HUANGSHAN UNIV
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