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Semiconductor photoetching machine and use method thereof

A lithography machine and semiconductor technology, applied in the direction of optomechanical equipment, microlithography exposure equipment, optics, etc., can solve the problems of ineffective cooling and waste of water resources, and achieve the goal of increasing flexibility, ensuring effect and speed Effect

Active Publication Date: 2021-07-16
上饶市广丰时代科技有限公司
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Problems solved by technology

[0004] Existing lithography machines require a large amount of cooling water to flow and cool down. In this way, when the cooling water is at the source of heat, due to the large temperature difference, the cooling water quickly Therefore, a large amount of water is required to deal with such a problem. Therefore, in the process of cooling down, a large amount of water is consumed, which causes a lot of waste of water resources in the process of cooling down the lithography machine. Therefore, Propose a cooling system for rapid cooling and rapid cooling and recyclable use

Method used

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  • Semiconductor photoetching machine and use method thereof
  • Semiconductor photoetching machine and use method thereof
  • Semiconductor photoetching machine and use method thereof

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Embodiment Construction

[0032] The implementation of the present application will be described in detail below with reference to the accompanying drawings and examples, so as to fully understand and implement the implementation process of how the present application uses technical means to solve technical problems and achieve technical effects.

[0033] Such as Figure 1-5 As shown, the present invention provides a semiconductor lithography machine, including: an electrode cover 1, an EUV light emitting end 2 is provided through the inner axis of the electrode cover 1, and the left end of the EUV light emitting end 2 extends to the left of the electrode cover 1 side, the left end of the electrode cover 1 is fixedly connected with a light source lens 3, the middle part of the left side of the light source lens 3 is provided with an EUV light source hole 4, and the upper and lower sides of the right side of the electrode cover 1 are respectively connected with a water inlet pipe 5 and an outlet pipe 10,...

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Abstract

The invention relates to the technical field of EUV light source heat dissipation systems, in particular to a semiconductor photoetching machine. The machine comprises an electrode sleeve, and an EUV light emitting end is arranged at the axis in the electrode sleeve in a penetrating mode. When purified cooling water passes through a first cooling sleeve arranged on a water inlet pipe, the purified cooling water can enable heat dissipation annular plates to rotate, cold water in a second circulating water pipe is evenly dispersed in a cylindrical water tank, so that cooling water can enter water cooling plates from open annular blocks. The multiple heat dissipation annular plates rotate between the two water cooling plates, and in this way, the indirect contact area of cooling water in the water cooling plates and the heat dissipation annular plates can be increased. The cooling water used for the electrode sleeve is located between the heat dissipation annular plates and the water cooling plates, then heat conduction can be rapidly conducted, it can be guaranteed that water cooled through liquid nitrogen in a cooling tank can be rapidly recycled into a purified water tank after being used, and the cooling speed and efficiency of cooling water in the cooling mechanism can be improved.

Description

technical field [0001] The present invention relates to the technical field of EUV light source heat dissipation system, in particular to a semiconductor photolithography machine and a method for using the same. Background technique [0002] In the semiconductor industry, extreme ultraviolet lithography is considered to be the mainstream lithography technology for the 22-16nm node. The EUV light source is one of its important components. Among them, the DPP-EUV light source is one of the mainstream light sources in the 13.5nm band at this stage. The DPP-EUV light source uses discharge to make the Xe medium form plasma and radiate ultraviolet rays. The reflector reflects and purifies the energy spectrum multiple times to obtain EUV light in the 13.5nm band. The local temperature of the discharge electrode inside the light source can reach 2000-2500°C during operation. [0003] If the temperature accumulates, it will cause irreparable damage to the discharge electrode, reduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70891
Inventor 李美娟
Owner 上饶市广丰时代科技有限公司
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