Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-temperature sintered microwave dielectric material Mg[2-x]Co[x]V[2]O[7] and preparation method thereof

A technology of mg2-xcoxv2o7 and microwave dielectric materials, applied in sustainable manufacturing/processing, chemical industry, climate sustainability, etc., can solve the problems of microwave dielectric properties to be improved and high sintering temperature

Active Publication Date: 2021-06-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this paper, the solid-state reaction method was used to prepare Mg 2 V 2 o 7 Microwave dielectric ceramics whose microwave dielectric properties are ε r =10.5, Q×f=58275GHz, τ f =-26.9ppm / ℃, the sintering temperature is still high, and the microwave dielectric properties need to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-temperature sintered microwave dielectric material Mg[2-x]Co[x]V[2]O[7] and preparation method thereof
  • Low-temperature sintered microwave dielectric material Mg[2-x]Co[x]V[2]O[7] and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0022] The present invention provides 3 embodiments in total, and the formula of the low-temperature sintered microwave dielectric material provided by each embodiment is: Mg 2- x co x V 2 o 7 , wherein, x=0.5, 0.75, 1.0; the low-temperature sintered microwave ceramic materials are prepared by the following method:

[0023] Step 1: Follow Mg 2-x co x V 2 o 7 (0.5≤x≤1.0) molar ratio to analyze pure CoO, MgCO 3 , V 2 o 5 Dosing ingredients for raw materials;

[0024] Step 2: Using alcohol and zirconium balls as the ball milling medium, mill the mixture in a nylon tank for 4 to 6 hours, and place the material after ball milling in an oven at 70°C for drying;

[0025] Step 3: sieve the dry material, then place it in a crucible and pre-fire it at 700-750°C for 3-4 hours to obtain the pre-fired material;

[0026] Step 4: Using alcohol ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
resonant frequency temperature coefficientaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of electronic ceramics and manufacturing thereof, and provides a low-temperature sintered microwave dielectric material and a preparation method thereof. The low-temperature sintering microwave dielectric material is Mg[2-x]Co[x]V[2]O[7] (x is larger than or equal to 0.5 and smaller than or equal to 1.0), the crystal phase of the low-temperature sintering microwave dielectric material is Mg2V2O7, the crystal structure is a monoclinic crystal structure, and cobalt ions and magnesium ions jointly occupy A sites. According to the invention, the addition of cobalt ions enables the crystal phase Mg2V2O7 of the microwave medium to be converted from a triclinic structure to a monoclinic structure, the crystal grains grow up, and the atom accumulation rate is improved, so that the Q*f value is greatly improved; and meanwhile, low-temperature sintering at 860-870 DEG C is realized, and the problem that the sintering temperature of the microwave dielectric material is too high is solved. The low-temperature sintered microwave dielectric material provided by the invention has excellent microwave dielectric properties at the sintering temperature of 860-870 DEG C: the dielectric constant is 8-9, the Q*f value is 66000-72000 GHz, and the temperature coefficient of resonance frequency is -30 to -26 ppm / DEG C; in addition, the low-temperature sintering microwave dielectric material is simple in preparation process, low in production cost and beneficial to industrial production.

Description

technical field [0001] The invention belongs to the field of electronic ceramics and its manufacture, and relates to microwave dielectric ceramic Mg 2 V 2 o 7 Doping modification, specifically related to a low-temperature sintered microwave dielectric material Mg 2-x co x V 2 o 7 and its preparation method. Background technique [0002] Low temperature co-fired ceramics (LTCC) technology has been widely used in the field of microwave device preparation, such as mobile phones, satellite broadcasting, radar and so on. Microwave dielectric materials used in practice need to have low dielectric loss, appropriate dielectric constant and near-zero resonant frequency temperature coefficient. MgO-V 2 o 5 The vanadate series has attracted widespread attention due to its inherent low sintering temperature and excellent microwave properties. Joung et al published an article "Formation and Microwave Dielectric Properties of the Mg 2 V 2 o 7 Ceramics". In this paper, Mg was ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622C04B35/64
CPCC04B35/495C04B35/622C04B35/64C04B2235/3206C04B2235/3239C04B2235/3275Y02P20/10
Inventor 李波曹慧敏韩如意
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products