Carbon-based multilayer film and preparation method and application thereof

A multi-layer thin-film, carbon-based technology, used in coatings, metal material coating processes, ion implantation plating, etc., can solve problems such as poor film/base bonding force, improve performance and life, and improve bonding. Effects of strength, good compatibility and metallurgy

Active Publication Date: 2021-05-28
广东华升纳米科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the bonding strength of the transition metal layer to the substrate (such as cemented carbide substrate) and the ta-C film is different, which makes it difficult for the general transition metal layer to have a strong High interfacial binding, resulting in poor membrane / substrate binding

Method used

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  • Carbon-based multilayer film and preparation method and application thereof
  • Carbon-based multilayer film and preparation method and application thereof
  • Carbon-based multilayer film and preparation method and application thereof

Examples

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preparation example Construction

[0082] The preparation method of the above-mentioned carbon-based multilayer film is carried out by using an arc evaporation composite magnetron sputtering coating machine, and the arc evaporation composite magnetron sputtering coating machine is composed of a vacuum chamber, two magnetron sputtering sources, an electric arc The evaporation source is composed of a workpiece support that can rotate at the same time, and the workpiece support is installed inside the vacuum chamber. Among them, the two magnetron sources are equipped with pure Ta target and Ti target respectively, and the arc evaporation source is equipped with pure graphite target.

[0083] The invention also provides the application of the carbon-based multilayer film in the manufacture of electronic products.

[0084] Compared with the prior art, the carbon-based multilayer film of the present invention has the following beneficial effects:

[0085] The invention adopts Ta metal and Ti metal to form a double m...

Embodiment 1

[0090] 1) Substrate cleaning: ultrasonically clean the silicon wafer substrate with alcohol, then rinse it with deionized water, dry it with dry compressed air, place the substrate on the workpiece support in the vacuum chamber, and evacuate the vacuum chamber to a vacuum degree of 1.0×10 –4 Below Pa. Turn on the ion source, pass 300 sccm of argon gas into the ion source, keep the strong pressure at 1Pa, set the ion source power to 1kW, set the workpiece support bias to -800V, and work for 30 minutes.

[0091] 2) Deposit metal Ta layer: Turn on the magnetron sputtering source equipped with Ta target, pass 150 sccm of argon gas into the vacuum chamber, and control the overall pressure of the vacuum chamber to 0.5Pa; at the same time, set the bias voltage of the substrate to -100V, and set the sputtering power supply to At 3kW, the deposition time was 10 minutes.

[0092] 3) Deposit metal Ti layer: turn on the magnetron sputtering source equipped with Ti target, pass 150 sccm o...

Embodiment 2

[0097] 1) Substrate cleaning: ultrasonically clean the silicon wafer substrate with alcohol, then rinse it with deionized water, dry it with dry compressed air, place the substrate on the workpiece support in the vacuum chamber, and evacuate the vacuum chamber to a vacuum degree of 1.0×10 –4 Below Pa. Turn on the ion source, feed 300 sccm of argon gas into the ion source, keep the strong pressure at 1Pa, set the ion source power to 1kW, set the workpiece support bias to -800V, and work for 30 minutes.

[0098] 2) Deposit metal Ta layer: Turn on the magnetron sputtering source equipped with Ta target, feed argon gas 180sccm into the vacuum chamber, and control the overall pressure of the vacuum chamber to 0.6Pa; at the same time, set the bias voltage of the substrate to -100V, and set the sputtering power supply to At 4kW, the deposition time was 8 minutes.

[0099] 3) Deposit metal Ti layer: Turn on the magnetron sputtering source equipped with Ti target, feed argon gas 180sc...

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Abstract

The invention relates to a carbon-based multilayer film which is characterized in that the carbon-based multilayer film comprises a base body, a transition layer and a ta-C layer, wherein the transition layer comprises a metal Ta layer, a metal Ti layer and a TiC layer, and the metal Ta layer, the metal Ti layer, the TiC layer and the ta-C layer are sequentially arranged on the base body in a stacked mode. According to the method, the electric arc is combined with the bias voltage to generate a high-energy carbon ion beam to bombard the metal Ti surface layer, and the TiC layer is formed by implanting the carbon ions into the Ti surface, so that the metal Ti layer and the ta-C layer have very strong interface bonding, the use performance of the film can be remarkably improved, and the service life of the film can be remarkably prolonged.

Description

technical field [0001] The invention relates to the technical field of surface engineering, in particular to a carbon-based multilayer film and its preparation method and application. Background technique [0002] Tetrahedral amorphous carbon (ta-C) C-C sp 3 The content exceeds 80%, and the structure and performance are very close to diamond (sp 3 Bond content 100%), has the advantages of low friction, self-lubricating, good thermal stability, low temperature deposition, and extremely high hardness and wear resistance, and has a wide range of applications in the fields of electronic manufacturing (micro-drilling), precision molds and other fields. However, factors such as high internal stress and low film / substrate cohesion of ta-C films greatly limit their lifetime and performance. [0003] Adding a transition layer between the ta-C coating and the substrate is currently the main means to improve the bonding force of the ta-C coating film / substrate, but the metal layer de...

Claims

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Application Information

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IPC IPC(8): C23C14/32C23C14/35C23C14/02C23C14/06C23C14/14
CPCC23C14/325C23C14/352C23C14/0635C23C14/0605C23C14/14C23C14/025
Inventor 林海天李立升代伟胡致富王启民
Owner 广东华升纳米科技股份有限公司
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