A microfluidic adapter plate integrating a high-power radio frequency chip and its preparation method

Abstract

The invention provides a microfluidic adapter board integrating a high-power radio frequency chip and a preparation method thereof, comprising a signal interconnection layer, a microfluidic structure layer and a microfluidic interface structure layer; the signal interconnection layer includes a grounding metal layer covered on the surface The top silicon chip and the thick copper structure embedded inside the top silicon chip, the upper surface of the thick copper structure is provided with a chip bonding surface and connected to the ground metal layer; the micro flow channel structure layer includes the middle layer silicon chip and the middle layer silicon The split flow channel and the confluence flow channel inside the sheet, several cooling channels are arranged in parallel between the diversion flow channel and the confluence flow channel, and the split flow channel, the cooling flow channel and the confluence flow channel are connected in sequence; the microfluidic interface structure layer Including the bottom silicon chip, the liquid inlet corresponding to the split flow channel, and the liquid outlet corresponding to the confluence flow channel; the present invention combines thick copper structure and micro channel, and uses high heat capacity cooling liquid working medium to reduce the waste heat of heating devices Take it away in time, and the heat dissipation efficiency can be significantly improved.

Description

technical field [0001] The invention relates to the technical field of microelectronics and microsystems. Background technique [0002] With the development of technology, systems in the fields of radar, electronic countermeasures and communications gradually present high density, multi-function, high reliability and low cost. As the core component of the RF system, RF power chips are mostly GaN high electron mobility transistor (HEMT) multi-stage amplifiers. Among them, the heating power of the GaN HEMT transistor gate can reach 60-80 W. As the RF power device increases by 1°C on the basis of the safe operating temperature, its RF output characteristics will decrease exponentially, and its reliability will decrease by about 5%. If the heat generated by the electronic device cannot be dissipated in time, it will Directly affect the performance of the radio frequency system, and even cause damage. In the GaN RF power chip, the source of the GaN HEMT transistor is grounded ...

AI Technical Summary

Problems solved by technology

Therefore, the complete set of technology for the integration of high-power RF power chips is a bottleneck restricting the development of current high-power RF systems.

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