Structure and preparation method of MOSFET device based on diamond substrate

A diamond and single crystal diamond technology, applied in the field of microelectronics, can solve the problems of the maximum saturation current device switching ratio output resistance, insufficient cut-off frequency, the advantages of diamond-based devices are not fully reflected, and the quality of diamond materials is not enough, etc. Simple process, excellent pinch-off characteristics, high breakdown voltage effect

Inactive Publication Date: 2021-04-23
西安电子科技大学芜湖研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although the research on diamond-based devices has made great progress, the superiority of diamond-based devices has not been fully reflected because the quality of the obtained diamond materials is not high enough.
Due to the difficulty in the preparation of diamond single crystals, diamond thin films are mainly obtained by homoepitaxial growth on single crystal diamond substrates. There are deficiencies in the cut-off frequency and other aspects

Method used

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  • Structure and preparation method of MOSFET device based on diamond substrate
  • Structure and preparation method of MOSFET device based on diamond substrate
  • Structure and preparation method of MOSFET device based on diamond substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0035] S1: Using a colorless single crystal diamond 101 grown by MPCVD as a substrate, at a temperature of 850° C., expose the upper and lower surfaces of the diamond substrate 101 to hydrogen plasma for 10 minutes to form a hydrogen terminal layer 102, and the hydrogen flow rate is 500 sccm;

[0036] S2: On both sides of the diamond substrate 101 with the hydrogen terminal layer 102, deposit a layer of Au with a thickness of 100 nm by electron beam evaporation, and form an ohmic contact with the surface of the diamond substrate as a source electrode and a drain electrode;

[0037] S3: Deposit 4nm-thick Al on the upper and lower surfaces of the sample obtained in the previous step, and then anneal at 80°C for 30min to form 5nm-thick Al 2 o 3 As a gate dielectric layer;

[0038] S4: Finally, 100 nm of Al is deposited on the surface of the gate dielectric layer, and the gate electrode is formed by peeling off to complete the preparation of the device.

Embodiment 2

[0040] S1: using colorless single crystal diamond grown by MPCVD as a substrate, at a temperature of 700-900°C, exposing the upper and lower surfaces of the diamond substrate 101 to hydrogen plasma for 5 minutes to form a hydrogen terminal layer 102, and the hydrogen flow rate is 450 sccm;

[0041] S2: On both sides of the diamond substrate 101 with the hydrogen terminal layer 102, deposit a layer of Au with a thickness of 50 nm by electron beam evaporation, and form an ohmic contact with the surface of the diamond substrate 101 as the source electrode 103 and the drain electrode 104;

[0042] S3: Deposit 4nm-thick Al on the upper and lower surfaces of the sample obtained in the previous step, and then anneal at 70-90°C for 25min to form 3nm-thick Al 2 o 3 As a gate dielectric layer 105;

[0043] S4: Finally, 90 nm of Al is deposited on the surface of the gate dielectric layer 105, and the gate electrode 106 is formed by peeling off to complete the preparation of the device. ...

Embodiment 3

[0045] S1: Using colorless single crystal diamond grown by MPCVD as the substrate, at a temperature of 900° C., the upper and lower surfaces of the diamond substrate 101 were exposed to hydrogen plasma for 15 minutes to form a hydrogen terminal layer 102, and the hydrogen flow rate was 550 sccm;

[0046] S2: On both sides of the diamond substrate 101 with the hydrogen termination layer 102, a layer of Au with a thickness of 150 nm is deposited by electron beam evaporation to form an ohmic contact with the surface of the diamond substrate 101 as the source electrode 103 and the drain electrode 104;

[0047] S3: Deposit 4nm-thick Al on the upper and lower surfaces of the sample obtained in the previous step, and then anneal at 90°C for 35min to form 10nm-thick Al 2 o 3 As a gate dielectric layer 105;

[0048] S4: Finally, 110 nm of Al is deposited on the surface of the gate dielectric layer 105, and the gate electrode 106 is formed by peeling off to complete the preparation of th...

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Abstract

The invention discloses a structure and a preparation method of an MOSFET device based on a diamond substrate, and belongs to the technical field of microelectronics. The structure comprises a diamond substrate, hydrogen terminal layers arranged at the upper end and the lower end of the diamond substrate, a source electrode and a drain electrode arranged on the two sides of the diamond substrate respectively, gate dielectric layers arranged on the surfaces of the hydrogen terminal layers and gate electrodes arranged on the surfaces of the gate dielectric layers. According to the double-gate diamond device formed by the method, the maximum saturation current and transconductance of the diamond device can be improved under the condition of keeping the threshold voltage basically unchanged, the switching ratio of the device is improved by nearly three orders of magnitudes, the output resistance of the device is reduced, the cut-off frequency of the diamond device is greatly improved, and the characteristics of simple manufacturing process and good repeatability are achieved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a structure and a preparation method of a MOSFET device based on a diamond substrate. The prepared device can be used in high-voltage and high-frequency applications and constitute a basic unit of a digital circuit. Background technique [0002] Diamond is known as the ultimate material among semiconductor materials, with excellent properties such as wide band gap, high breakdown electric field, high frequency, and high temperature resistance. Single crystal diamond and hydrogen gas form hydrogen terminals on the diamond surface, and this structure can obtain more than 4500cm at room temperature 2 / Vs electron mobility, and up to 1.5×10 7 cm / s saturation electron velocity, and can obtain up to 10 12 -10 14 cm -2 The two-dimensional hole gas density and the bandgap width of about 5.5eV make diamond have good breakdown resistance, and its highest breakdown ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/06H01L29/423H01L29/16
Inventor 陈军飞王东吴勇陈兴黄永操焰崔傲袁珂谷露云汪琼陆俊季亚军孙凯张进成
Owner 西安电子科技大学芜湖研究院
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