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Quantum dot light-emitting layer and preparation method and application thereof

A quantum dot light-emitting and quantum dot technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electric solid-state devices, etc., can solve problems such as high requirements for equipment capability and precision, great influence on the luminous efficiency of quantum dots, and complex process.

Active Publication Date: 2021-04-09
SHENZHEN PLANCK INNOVATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

CN102944943A discloses a quantum dot color filter, a liquid crystal panel and a display device, including a quantum dot material to form a color filter for a display, and the red light, or green light, or blue light filter is used to generate red light through optical excitation , or green light, or blue light quantum dot materials can improve the utilization rate of the backlight source and obtain higher purity color light, so the quantum dot display can achieve high color gamut and low power consumption of color display, but it does not affect quantum dots. The method of point layer graphics is explained
CN103226260A discloses a liquid crystal display screen, a display device and a method for patterning a quantum dot layer, and provides a method for dispersing quantum dots in a photoresist and patterning a quantum dot layer through a photolithography process, and the prepared quantum dot layer The dot layer replaces the existing color resin as a color filter to convert background light into monochromatic light, which has the advantages of high luminous efficiency, wide color gamut, and high color saturation; but quantum dots are dispersed in photoresist, due to photolithography There are various polymer materials such as initiators, polymer monomers, polymers, and additives in the glue. The surface chemical environment of quantum dots is complex, which greatly affects the luminous efficiency of quantum dots.
CN105355726A discloses a method for patterning a quantum dot layer and a method for preparing a quantum dot color film. A photoresist layer with a pattern structure is used as a shielding layer to etch a monochromatic quantum dot layer to obtain a patterned quantum dot layer. The method used can prepare fine quantum dot graphics, which greatly improves the display resolution of the graphic quantum dot layer; the quantum dot color film is prepared according to the above-mentioned quantum dot layer graphic method, and the prepared quantum dot color film has fine quantum dot color film. dot pattern, and the luminous efficiency of quantum dots is high, thereby effectively improving the resolution of the display device and the utilization rate of the backlight, but this method is complicated in process, high in production cost, requires high equipment capacity and precision, and is difficult to realize Pixel-level quantum dot arrangement

Method used

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  • Quantum dot light-emitting layer and preparation method and application thereof
  • Quantum dot light-emitting layer and preparation method and application thereof
  • Quantum dot light-emitting layer and preparation method and application thereof

Examples

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Embodiment 1

[0077] A method for preparing a quantum dot luminescent layer, specifically comprising the steps of:

[0078] (1) Preparation of the charged core quantum dot deposition solution: react the octadecene solution of the InP core with vinyltriethoxysilane for 6 minutes to obtain an intermediate product; add sodium acetate to mix at 220°C, Among them, the molar concentration of the InP core in the octadecene solution is 2.5mol / L, the concentration of vinyltriethoxysilane in the octadecene solution is 0.5mol / L, and the molar concentration of sodium acetate in the octadecene solution is 120mol / L; Reaction 45min, obtain charged InP core deposition solution (red light core quantum dot deposition solution); Under the same conditions, replace the InP core with CsPbBr 3 Core, repeat the above steps to get charged CsPbBr 3 Core deposition solution (green light core quantum dot deposition solution); replace the InP core with a CdSe core, repeat the above steps to obtain a charged InP core ...

Embodiment 2

[0083] A kind of preparation method of quantum dot luminescent layer, its difference with embodiment 1 only lies in step (1) InP core quantum dot, CsPbBr in octadecene solution 3 The molar concentration of core quantum dots and CdSe core quantum dots is 0.25mol / L, and the molar concentration of sodium acetate in the octadecene solution is 12mol / L; other component dosages and experimental conditions are all the same as in Example 1, and the quantum Point glow layer.

Embodiment 3

[0085] A kind of preparation method of quantum dot luminescent layer, its difference with embodiment 1 only lies in step (1) InP core quantum dot, CsPbBr in octadecene solution 3 The molar concentration of the core quantum dots and the CdSe core quantum dots is 5mol / L, and the molar concentration of sodium acetate in the octadecene solution is 240mol / L; other component dosages and experimental conditions are the same as in Example 1, and the quantum dots are obtained luminous layer.

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Abstract

The invention provides a quantum dot light-emitting layer and a preparation method and application thereof. The preparation method comprises the following steps of: (1) enabling a core quantum dot solution to react with a silane coupling agent to obtain an intermediate product, and enabling the intermediate product to react with an organic salt to obtain a charged core quantum dot deposition solution; (2) placing a substrate in the charged core quantum dot deposition solution obtained in the step (1) for electro-deposition to obtain a core quantum dot deposition substrate; and (3) subjecting the core quantum dot deposition substrate obtained in the step (2) to reaction to obtain the quantum dot light-emitting layer. The preparation method is simple in overall process and low in manufacturing cost; and the obtained quantum dot light-emitting layer can realize pixel-level quantum dot arrangement, has the advantages of high display resolution, high light conversion efficiency, high light-emitting efficiency and the like, and can realize batch production.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot luminescent layer and a preparation method and application thereof. Background technique [0002] With the continuous development of display technology, people have higher and higher requirements for display quality of display devices. The particle size of quantum dot (Quantum Dot, QD) materials is generally between 1 and 10nm. Since electrons and holes are quantum-confined, the continuous energy band structure becomes a discrete energy level structure, so the luminescence spectrum is very narrow (20 ~30nm), high chroma purity, and wide display color gamut, which can greatly exceed the color gamut range of the National Television Standards Committee (NTSC); at the same time, the light absorption loss of quantum dot materials through color filters is small, which can Realize low power consumption display. Therefore, as a new generation of luminescent m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/00H01L51/50H10K99/00
CPCH10K71/12H10K50/115H10K50/11H10K71/00Y02B20/00
Inventor 张志宽高丹鹏杨丽敏徐冰孙小卫
Owner SHENZHEN PLANCK INNOVATION TECH CO LTD
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