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A kind of n-type topcon battery with double-sided aluminum paste electrodes and preparation method thereof

An N-type, battery technology, applied in the field of solar cells, can solve the problems of increasing the diffusion length of carriers, reducing the cost of battery production, and low photoelectric conversion efficiency, and achieving the effects of reducing laser damage, improving Voc, and improving battery efficiency.

Active Publication Date: 2021-08-06
正泰新能科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to overcome the problems of high electrode cost and low photoelectric conversion efficiency of N-type Topcon batteries, and provides an N-type Topcon battery with double-sided aluminum paste electrodes and a preparation method thereof. Grid lines and segmented silver busbars; by adjusting the glass frit composition in the paste, only good ohmic contact is formed between the paste and the doped N-type doped polysilicon layer, and no BSF layer is formed, so that the rear aluminum paste can be realized Instead of silver paste, it forms a good field passivation effect, thereby increasing the diffusion length of carriers, increasing the Voc of the battery, and reducing the production cost of the battery

Method used

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  • A kind of n-type topcon battery with double-sided aluminum paste electrodes and preparation method thereof
  • A kind of n-type topcon battery with double-sided aluminum paste electrodes and preparation method thereof
  • A kind of n-type topcon battery with double-sided aluminum paste electrodes and preparation method thereof

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preparation example Construction

[0040] The preparation method of the N-type Topcon battery with double-sided aluminum paste electrodes, the preparation process is: texture → B diffusion → BSG removal → alkali polishing → back LPCVD deposition tunnel oxide layer and polysilicon layer → back P diffusion → removal PSG → dewinding plating → front AlO x layers and SiN x h y Layer Deposition → Backside SiN x h y Deposition → front / back UV laser ablation → screen printing. Including the following specific preparation steps:

[0041] A. Preparation of N-type double-sided cells before metallization, using N-type single crystal silicon wafers as the substrate, and the front side of the N-type silicon wafers are sequentially diffused by B to form a P-type doped region layer, deposited by PECVD with a thickness of 2-15nm AlO x layer and SiN with a thickness of 50-100 nm x h y layer, on the back of the N-type silicon wafer, a tunnel oxide layer with a thickness of 1-8mm is deposited sequentially by LPCVD, and an ...

Embodiment 1

[0046] An N-type Topcon battery with double-sided aluminum paste electrodes, including an N-type substrate 1, the front of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6, AlO x Layer 7 and SiN x h y layer 8, the back of the N-type substrate 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and SiN x h y Layer 8, the front side of the SiN x h y Layer 8 is provided with front silver main grid 2 and front aluminum fine grid 3, and the SiN x h y The back silver main grid 4 and the rear aluminum fine grid 5 are arranged on the layer 8 .

[0047] The thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the rear aluminum fine grid 5, and the back silver busbar 4 are distributed in the back aluminum fi...

Embodiment 2

[0054] An N-type Topcon battery with double-sided aluminum paste electrodes, including an N-type substrate 1, the front of the N-type substrate 1 is sequentially provided with a P-type doped region layer 6, AlO x Layer 7 and SiN x h y layer 8, the back of the N-type substrate 1 is sequentially provided with a tunnel oxide layer 9, an N-type doped polysilicon layer 10 and SiN x h y Layer 8, the front side of the SiN x h y Layer 8 is provided with front silver main grid 2 and front aluminum fine grid 3, and the SiN x h y The back silver main grid 4 and the rear aluminum fine grid 5 are arranged on the layer 8 .

[0055] The thickness of the front silver busbar 2 is smaller than the thickness of the front aluminum fine grid 3, the front silver busbar 2 is distributed in the front aluminum fine grid 3, the thickness of the rear silver busbar 4 is smaller than the thickness of the rear aluminum fine grid 5, and the back silver busbar 4 are distributed in the back aluminum fi...

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Abstract

The invention relates to the technical field of solar cells. Aiming at the problems of high electrode cost and low photoelectric conversion efficiency of an N-type Topcon battery, it discloses an N-type Topcon battery with double-sided aluminum paste electrodes and a preparation method thereof. The front of the battery is provided with a front Silver main grid and front aluminum fine grid, and the back of the battery is equipped with a rear silver main grid and a rear aluminum fine grid; the preparation method of the above-mentioned battery: texture → B diffusion → BSG removal → alkali polishing → back LPCVD deposition of tunnel oxide layer and polysilicon Layer → rear P diffusion → PSG removal → winding plating → front AlO x layers and SiN x h y Layer Deposition → Backside SiN x h y Deposition → front / back UV laser ablation → screen printing. In the present invention, the front / back side is printed with aluminum paste to obtain aluminum grid lines and segmented silver busbars; the back side aluminum paste is replaced by silver paste to form a good field passivation effect, thereby increasing the diffusion length of carriers, improving battery Voc, and reducing battery life. production cost.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an N-type Topcon cell with double-sided aluminum paste electrodes and a preparation method thereof. Background technique [0002] Topcon solar cell (Tunnel Oxide Passivated Contact) is a solar cell that uses an ultra-thin oxide layer as a passivation layer structure. Among them, the structure of the N-type Topcon battery is N-type Si as the substrate, and the P+ doped layer is obtained by B diffusion on the front side, and the corresponding AlO is deposited on the front side by ALD or PECVD. x / SiN x Passivation dielectric film; Deposit tunnel oxide layer and polysilicon on the back by LPCVD, and obtain N+ doped layer by in-situ P doping or intrinsic P diffusion; front and back are usually obtained by screen printing The corresponding metal electrodes use silver-aluminum paste on the front and silver paste on the back; on the one hand, compared with the P-type PERC battery,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/068H01L31/18
CPCH01L31/022425H01L31/022433H01L31/022441H01L31/068H01L31/1804H01L31/1868Y02P70/50H01L31/02167H01L31/02168H01L31/02363
Inventor 丰明璋何胜徐伟智
Owner 正泰新能科技股份有限公司
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